The Influence of Defects on the Morphology of Si (111) Etched in NHF

Published

January 1, 2005

Author(s)

Hui Zhou, Joseph Fu, Richard M. Silver

Abstract

We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in our experiments. By introducing both dopant sites and lattice defect sites into the model, we are able to simulate samples having different dopant elements and densities as well as different defect concentrations. With the modified KMC simulation, the simulated surface morphologies agree well with the morphologies observed in our experiments. The enhanced model also gives insights to the formation mechanism multiple level stacking pits, a notable morphology on the etched surfaces of samples with very small miscut angles.

Citation

Journal of Physical Chemistry

Volume

109

Pub Type

Journals

Keywords

kinetic Monte-Carlo (KMC) simulation, lattice defect sites, morphologies of Si (11), stacking pits

Citation

Zhou, H. , Fu, J. and Silver, R. (2005), The Influence of Defects on the Morphology of Si (111) Etched in NHF, Journal of Physical Chemistry (Accessed October 10, 2025)