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Dimensional Metrology of Resist Lines Using a SEM Model-Based Library Approach

Published

Author(s)

John S. Villarrubia, Andras Vladar, B Bunday, M R. Bishop

Abstract

The widths of 284 lines in a 193 nm resist were measured by two methods and the results compared. One method was scanning electron microscopy (SEM) of cross-sections. The other was a model-based library (MBL) approach in which top-down CD-SEM line scans of structures are compared to a library of simulated line scans, each one of which corresponds to a well-defined sample structure. By matching measured to simulated images, feature edge shapes and locations are determined. This way of determining critical dimensions makes use of known physics of the interaction of the electron beam with the sample, thereby removing some of the ambiguity in sample edge positions that are assigned by more arbitrary methods. Thus far, MBL has shown promise on polycrystalline silicon samples [Villarrubia et al., Proc. SPIE 4689, pp. 304-312 (2002)]. Resist lines, though important in semiconductor manufacturing, pose a more difficult problem because resist tends to shrink and charge upon elect.
Proceedings Title
Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVIII, Richard M. Silver, Editor
Volume
5375
Conference Dates
February 23, 2004
Conference Location
Santa Clara, CA, USA
Conference Title
Methods for Modeling

Keywords

critical dimension (CD), linewidth, model-based library metrology, resist, Scanning Electron Microscopy (SEM)

Citation

Villarrubia, J. , Vladar, A. , Bunday, B. and Bishop, M. (2004), Dimensional Metrology of Resist Lines Using a SEM Model-Based Library Approach, Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVIII, Richard M. Silver, Editor, Santa Clara, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=822158 (Accessed June 22, 2024)

Issues

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Created April 30, 2004, Updated October 12, 2021