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We investigate the influence of finite resolution on measurement uncertainty from a perspective of the Guide to the Expression of Uncertainty in Measurement (GUM). Finite resolution in the presence of Gaussian noise yields a distribution of results that
Thomas B. Renegar, Theodore V. Vorburger, Son H. Bui
This paper presents the development of a virtual surface calibration database for parameter evaluation and algorithm verification. The database runs from a web site at the National Institute of Standards and Technology (NIST), USA. Companies, universities
H Kuramochi, F Perez-murano, John A. Dagata, H Yokoyama
Faradaic current during anodic oxidation is measured over a relative humidity range of 40¿70% using an atomic force microscope with humidity control. The level of detected current during the fabrication of oxide dots on H-passivated Si(001) is in the
Jack A. Stone Jr., M Amer, Bryon S. Faust, Jay H. Zimmerman
The highest accuracy method for angle measurement employed at NIST(National Institute of Standards and Technology) makes use of an automated stack of three indexing tables-- our Advanced Automated Master Angle Calibration System (AAMACS)-- in conjunction
We have characterized the accuracy of atmospheric wavelength tracking based on a laser servolocked to a simple Fabry-Peron cavity. The motivations are (1) to explore a method for air refractive index measurement and (2) to determine the stability and
Andras Vladar, Michael T. Postek, John S. Villarrubia
This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, the in
The NIST M48 coordinate measuring machine (CMM) was used to measure the average diameter of two precision, silicon spheres of nominal diameter near 93.6 mm. A measurement technique was devised that took advantage of the specific strengths of the machine
Our customers usually measure mask features in order to make a business decision, such as whether or not to ship a mask to a customer. A simple cost/benefit model for mask CD metrology shows there is an optimum measurement uncertainty which will maximize
At the National Institute of Standards and Technology, our best capability for angle measurement is our Advanced Automated Master Angle Calibration System (AAMACS). This instrument is based on a triple-stack of indexing tables, used in conjunction with
Ndubuisi G. Orji, Jayaraman Raja, Theodore V. Vorburger, Xiaohong Gu
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology
Ndubuisi G. Orji, Jayaraman Raja, Son H. Bui, Theodore V. Vorburger
One of the most important aspects of step height evaluation are the analysis algorithms used. There algorithms assume that the profiles and images being analyzed are ideal, but real step profiles are not ideal and the analysis algorithms can influence the
The indentation process of pressing a rockwell diamond indenter into inelastic material has been studied to provide a means for the analysis, simulation and prediction of Rockwell hardness tests. The geometrical characteristics of the spheroconical-shaped
Boonserm Kulvatunyou, Nenad Ivezic, R A. Wysk, Albert W. Jones
Collaborative development of engineered products in a business-to-business (B2B) environment will require more than just the selection of components from an on-line catalogue. It will involve the electronic exchange of product, process, and production
This article compares Activity models of the Unified Modeling Language, version 2 (UML 2) [U2 Partners 2003], to a popular systems engineering (SE) flow diagram, the Enhanced Functional Flow Block Diagram (EFFBD) [Long 2002], and to the requirements for a
This article reviews the primary concepts of repository-centered development with the Unified Modeling Language, explaining the relation between notation, semantics, and model compilation. It highlights UML's approach to semantics, and flexibility in
M P. Henke, J M. Baldwin, K Summerhays, B Rasnick, P Murray, Daniel S. Sawyer, Bruce R. Borchardt, Steven D. Phillips, Craig M. Shakarji
Task specific CMM measurement uncertainty statements can be generated using computer (Monte Carlo) simulation. REcently, commercial products using this powerful technique have become available; however they typically involve megabytes of code inaccessible
The purpose of this paper is to define standard methods for effective and efficient image-based dimensional metrology for microlithography applications in the manufacture of integrated circuits. This paper represents a consensual view of the co-authors
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)
R Hillenbrand, F Keilmann, P Hanarp, D S. Sutherland, J Aizpurua
We introduce a carbon nanotube as optical near-field probe and apply it to visualize the plasmon fields of metal nanostructures in both amplitude and phase at 30 nm resolution. With 91 nm Au disks designed for fundamental plasmon resonance, we observe the
Natalia Farkas, Li Zhang, E A. Evans, R Ramsier, John A. Dagata
We show that AFM-induced oxide features can be reproducibly formed on both Zr and ZrN surfaces, and that the growth rate decreases rapidly with increasing time. There is an increase in oxide-feature height with humidity for both systems, and an
Marylyn H. Bennett, Angela Guerry, Ronald G. Dixson, Michael T. Postek, Theodore V. Vorburger
The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability - below one nanometer in some cases. Accuracy, however
This is the first in a series introducing the activity model in the Unified Modeling Language, version 2 (UML 2), and how it integrates with the action model [1]. The series is a companion to the standard, providing additional background, rationale
In this paper, we use virtual reality techniques to define an intuitive interface to a nanoscale manipulation device. This device utilizes optical methods to focus laser light to trap and reposition nano-to-microscopic particles. The underlying physics are