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Electronics

Semiconductors

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Displaying 251 - 275 of 748

Exciton Dynamics in Monolayer Transition Metal Michalcogenides

April 19, 2016
Author(s)
Galan A. Moody, John Schaibley, Xiaodong Xu
Since the discovery of semiconducting monolayer transition metal dichalcogenides, a variety of experimental and theoretical studies have been carried out seeking to understand the intrinsic exciton population decay and valley relaxation dynamics. Reports

Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets

April 4, 2016
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrology

Dual-beam laser thermal processing of silicon photovoltaic materials

March 14, 2016
Author(s)
Brian J. Simonds, Anthony Teal, Tian Zhang, Joshua A. Hadler, Zibo Zhou, Sergey Varlamov, Ivan Perez-Wurfl
Laser processing for photovoltaics (PV) has traditionally been used for very small dimension features where focused beams are rastered to create lines for edge isolation, scribing, and selective emitter formation and for drilling holes for drilling in wrap

Field Effects of Current Crowding at Metal-MoS2 Contacts

March 10, 2016
Author(s)
Hui H. Yuan, Guangjun Cheng, Sheng Yu, Angela R. Hight Walker, Curt A. Richter, Qiliang Li
Gate assisted contact-end Kelvin test structures and gate assisted 4-probe structures have been designed and fabricated to measure the field effects of current crowding at the source/drain contacts of top-gate MoS2 field effect transistors. The transistors

Mobility overestimation due to gated contacts in organic field-effect transistors

March 10, 2016
Author(s)
Emily G. Bittle, David J. Gundlach, Oana Jurchescu, James I. Basham, Thomas Jackson
Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide

Phase Behavior of Poly(3-hexylthiophene-2,5-diyl)

March 8, 2016
Author(s)
Chad R. Snyder, Enrique Gomez
The phase behavior of many conjugated polymers is rich but not yet fully explored. Stiff chain conformations and planar ring-like structures can promote both crystalline and liquid crystalline phases. Recent computational efforts that rely on atomistic and

Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity

March 2, 2016
Author(s)
Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kristine A. Bertness
The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich growth

Pulsed KrF excimer laser dopant activation in nanocrystal silicon in a silicon dioxide matrix

February 22, 2016
Author(s)
Tian Zhang, Brian Simonds, Keita Nomoto, Binesh Puthen Veettil, Ziyun Lin, Ivan Perez Wurfl, Gavin Conibeer
We demonstrate that a pulsed KrF excimer laser (λ=248 nm, τ=22 ns) can be used as a post-furnace annealing method to greatly increase the electrically active doping concentration in nanocrystal silicon (ncSi) embedded in SiO2. The application of a single

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

December 18, 2015
Author(s)
Matthew D. Brubaker, Shannon M. Duff, Todd E. Harvey, Paul T. Blanchard, Alexana Roshko, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness
We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire growth by controlling the polarity of the underlying nucleation layers. In particular, we find that N- polarity is beneficial for the growth of large ordered nanowire

High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

December 14, 2015
Author(s)
Ratan K. Debnath, Ting Xie, MD R. Hasan, Nhan V. Nguyen, Abhishek Motayed
We report on the significant performance enhancement of SnO2 thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO2 pn nanoscale heterojuctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in

Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization

November 5, 2015
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson, Mark Alexander Henn
Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier optical

Lateral Tip Control Effects in CD-AFM Metrology: The Large Tip Limit

October 21, 2015
Author(s)
Ronald G. Dixson, Ryan Goldband, Ndubuisi G. Orji
Critical dimension atomic force microscopes (CD-AFMs) use flared tips and two-dimensional sensing and control of the tip-sample interaction to enable scanning of features with near-vertical or even reentrant sidewalls. Features of this sort are commonly

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits

October 11, 2015
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski
The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based
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