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Electronics

Semiconductors

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Displaying 226 - 250 of 1445

Black phosphorus tunneling field-effect transistors

December 21, 2018
Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome

Electric field induced phase transition in vertical MoTe2 and Mo1-xWxTe2 based RRAM devices

December 10, 2018
Author(s)
Feng Zhang, Sergiy Krylyuk, Huairuo Zhang, Cory A. Milligan, Dmitry Y. Zemlyanov, Leonid A. Bendersky, Albert Davydov, Joerg Appenzeller, Benjamin P. Burton, Yugi Zhu
Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H

Magnetotransport in highly enriched 28Si for quantum information processing devices

November 25, 2018
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph Hagmann, Hyun S. Kim, Curt A. Richter, Joshua M. Pomeroy
Elimination of unpaired nuclear spins can result in low error rates for quantum computation; therefore, isotopically enriched 28Si is regarded as an ideal environment for quantum information processing devices. Using mass selected ion beam deposition

Effects of Nitrogen on the Interface Density of States Distribution in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors: Super-hyperfine Interactions and Near Interface Silicon Vacancy Energy Levels

November 13, 2018
Author(s)
Mark Anders, Patrick M. Lenahan, Arthur H. Edwards, Peter A. Schultz, Renee M. Van Ginhoven
The performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities

Parasitic engineering for RRAM control

October 15, 2018
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, helmut Baumgart, Kin P. Cheung
The inevitable current overshoot which follows forming or switching of filamentary resistive random access memory (RRAM) devices is often perceived as a source of variability that should be minimized. This sentiment has resulted in efforts to curtail the

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of

Non-tunneling origin of the 1/f noise in SiC MOSFET

July 1, 2018
Author(s)
Kin (Charles) Cheung, Jason Campbell
Abstract: It has long been established that MOSFET random telegraph noise and the cumulative 1/f noise is the result of inversion charge tunneling in and out of bulk traps in the gate oxide near the interface. The tunneling nature is a key concept upon

A practical field guide to thermoelectrics: fundamentals, synthesis, and characterization

June 27, 2018
Author(s)
Alex Zevalkink, David M. Smiadak, Joshua B. Martin, Michael Chabinyc, Olivier Delaire, Jeffrey Blackburn, Andrew Ferguson, Jian Wang, Kirill Kovnir, Laura Schelhas, Stephen D. Kang, Maxwell T. Dylla, G. J. Snyder, Brenden Ortiz, Eric Toberer
The study of thermoelectric materials spans condensed matter physics, materials science and engineering, and solid-state chemistry. The diversity of the participants and the inherent complexity of the topic means that it is difficult, if not impossible, for

Improving dielectric nanoresonator array coatings for solar cells

June 19, 2018
Author(s)
Dongheon Ha, Nikolai B. Zhitenev
We introduce single layer silicon dioxide (SiO2) nanosphere arrays as antireflection coatings (ARCs) on a gallium arsenide (GaAs) solar cell. We make macro- and nanoscale experiments and finite-difference time-domain (FDTD) calculations to prove the

First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

June 18, 2018
Author(s)
Wonil Chung, Mengwei Si, Pragya Shrestha, Jason Campbell, Kin P. Cheung, Peide Ye
In this work, ultrafast pulses with pulse widths ranging from 100 ps to seconds were applied on the gate of Ge ferroelectric (FE) nanowire (NW) pFETs with FE Hf0.5Zr0.5O2 (HZO) gate dielectric exhibiting steep subthreshold slope (SS) below 60 mV/dec bi
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