Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 226 - 250 of 748

The Role of Measurement Uncertainty in Achieving First-Pass Design Success

October 22, 2016
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement

FINE-TUNING ELECTRICAL FLOW RATE SENSING IN DEFORMABLE CHANNELS

October 9, 2016
Author(s)
Pengfei Niu, Brian J. Nablo, Kiran Bhadriraju, Darwin Reyes-Hernandez
Here we present conclusive proof that when using electrical impedance to measure volumetric flow rate in polydimethylsiloxane (PDMS) microchannels a considerable fraction of the change in impedance, due to change in flow rate, is caused by the variation in

Rapid and Accurate C-V Measurements

October 1, 2016
Author(s)
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an

Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic Properties

September 14, 2016
Author(s)
Katelyn Goetz, Jun?ya Tsutsumi, Sujitra Pookpanratana, Jihua Chen, Curt A. Richter, Christina Hacker, Tatsuo Hasegawa, Oana Jurchescu
The organic charge-transfer (CT) complex dibenzotetrathiafulvalene - 7,7,8,8-tetracyanoquinodimethane (DBTTF-TCNQ) is found to crystallize in two polymorphs when grown by physical vapor transport: the known α-polymorph and a new structure, the β-polymorph

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3

September 7, 2016
Author(s)
Arunima Singh, Albert Davydov, Francesca M. Tavazza, Lincoln J. Lauhon, Xiaochen Ren, Mercouri G. Kanatzidis, Lei Fang
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants

Roles of Nanofiber Scaffold Structure and Chemistry in Directing Human Bone Marrow Stromal Cell Response

August 22, 2016
Author(s)
Sumona Sarkar, Bryan A. Baker, Desu Chen, Patrick S. Pine, Jennifer H. McDaniel, Marc L. Salit, Wolfgang Losert, Carl G. Simon Jr., Joy P. Dunkers
Nanofiber technology has emerged as a promising tool to recapitulate the native extracellular matrix structure; however the properties of nanofibers governing cell-material interactions are still largely undetermined. In this study we have systematically

Charge Carrier Dynamics and Mobility Determined by Time-Resolved Terahertz Spectroscopy on Films of Nano-to-Micrometer-Sized Colloidal Tin(II) Monosulfide

August 1, 2016
Author(s)
Brian Alberding, Adam Biacchi, Angela R. Hight Walker, Edwin J. Heilweil
Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient is the visible range, and consists of earth abundant, non-toxic elements. For these reasons, SnS has generated much interest for incorporation

Coherent and incoherent coupling dynamics between neutral and charged excitons in Monolayer MoSe2

July 18, 2016
Author(s)
Kai Hao, Lixiang Xu, Philip Nagler, Akshay Singh, Kha Tran, Chandriker K. Dass, Rupert Huber, Tobias Korn, Xiaoqin Li, Galan Moody
The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport

Modeling early breakdown failures of gate oxide in SiC power MOSFETs

July 14, 2016
Author(s)
Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, D. E. Ioannou, Kin P. Cheung
One of the most serious technology roadblocks for SiC DMOSFETs is the significant occurrence of early failures in time-dependent-dielectric-breakdown (TDDB) testing. Conventional screening methods have proved ineffective because the remaining population is

Advancing X-Ray Scattering Metrology Using Inverse Genetic Algorithms

July 7, 2016
Author(s)
Adam F. Hannon, Daniel F. Sunday, Donald A. Windover, Regis J. Kline
We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov Chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings

Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100 C Using Sequential Surface Reactions

July 1, 2016
Author(s)
Alexana Roshko, Jaclyn Sprenger, Andrew S. Cavanagh, Steven George, Huaxing Sun, Kathryn J. Wahl
Low energy electrons may provide mechanisms to enhance thin film growth at low temperatures. In this work, gallium nitride (GaN) films were deposited over areas of ~5 cm2 at room temperature and 100 C using electrons with a low energy of 50 eV from an

Transient thermometry and high-resolution analysis of filamentary resistive switches

June 28, 2016
Author(s)
Jonghan Kwon, Chao-Yang Chen, Abhishek Sharma, Andrea Fantini, Malgorzata Jurczak, James A. Bain, Yoosuf Picard, Marek Skowronski, Andrew Herzing
We present data on the filament size and temperature distribution in Hf0.82Al0.18Ox-based Resistive Random Access Memory (RRAM) devices obtained by transient thermometry and high- resolution transmission electron microscopy (HRTEM). The thermometry shows

Characterization of Buried Interfaces with Scanning Probe Microscopes

May 19, 2016
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some capability to image sub-surface structure, including the details of buried interfaces. This paper describes the theoretical and practical basis for obtaining information about shallow buried interfaces

Low Frequency Radio Wave Detection of Electrically Active Defects in Dielectrics

May 19, 2016
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Pavel Kabos, Rhonda R. Franklin, Papa K. Amoah
In this paper, we discuss the use of low frequency (up to 300 MHz) radio waves (RF) to detect and characterize electrical defects present in the dielectrics of emerging integrated circuit devices. As an illustration, the technique is used to monitor the

In-Situ Metrology to Characterize Water Vapor Delivery during Atomic Layer Deposition

May 2, 2016
Author(s)
Tariq Ahmido, William A. Kimes, Brent A. Sperling, Joseph T. Hodges, James E. Maslar
Water is often employed as the oxygen source in metal oxide atomic layer deposition (ALD) processes. It has been reported that variations in the amount of water delivered during metal oxide ALD can impact the oxide film properties. Hence, one contribution

A ROUND ROBIN EXPERIMENT TO SUPPORT BOND VOID MEASUREMENT STANDARDS

May 1, 2016
Author(s)
Richard A. Allen, David T. Read, Victor H. Vartanian, Winthrop A. Baylies, William Kerr, Mark Plemmons, Kevin T. Turner
A round robin experiment to compare the sensitivities of various metrology tools to small voids between bonded wafers such as are used in three-dimensional stacked integrated circuits (3DS-ICs) and MEMS packaging. Participants received a set of four bonded

Hardware Security Thorough Supply Chain Assurance

April 28, 2016
Author(s)
Yaw S. Obeng, David A. Brown, Colm Nolan
This paper examines the current issues pertaining to the hardware security and how they could affect the overall security of applications such as the internet of things. Specifically, we review the ongoing industry-led activities aimed at mitigating the

Rapid Fabrication of Poly(DL-lactide) Nanofiber Scaffolds with Tunable Degradation for Tissue Engineering Applications by Air-brushing

April 28, 2016
Author(s)
Adam M. Behrens, Jeffrey J. Kim, Nathan A. Hotaling, Jonathan Seppala, Peter Kofinas, Wojtek J. Tutak
Polymer nanofiber based materials have been widely investigated for use as tissue engineering scaffolds. While promising, these materials are typically fabricated through techniques that require significant time or cost. Here we report a cost effective

Optical Spintronics in Organic-Inorganic Perovskites Photovoltaics

April 25, 2016
Author(s)
Junwen Li, Paul M. Haney
Organic-inorganic halide CH 3NH 3PbI 3 solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to the strong spin
Was this page helpful?