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Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement
Pengfei Niu, Brian J. Nablo, Kiran Bhadriraju, Darwin Reyes-Hernandez
Here we present conclusive proof that when using electrical impedance to measure volumetric flow rate in polydimethylsiloxane (PDMS) microchannels a considerable fraction of the change in impedance, due to change in flow rate, is caused by the variation in
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an
Continued Moore's law scaling and miniaturization of low power semiconductor chips with ever increasing functionality in the past decade have been relentlessly driving research and development of new devices, materials, and process capabilities to meet
Katelyn Goetz, Jun?ya Tsutsumi, Sujitra Pookpanratana, Jihua Chen, Curt A. Richter, Christina Hacker, Tatsuo Hasegawa, Oana Jurchescu
The organic charge-transfer (CT) complex dibenzotetrathiafulvalene - 7,7,8,8-tetracyanoquinodimethane (DBTTF-TCNQ) is found to crystallize in two polymorphs when grown by physical vapor transport: the known α-polymorph and a new structure, the β-polymorph
Arunima Singh, Albert Davydov, Francesca M. Tavazza, Lincoln J. Lauhon, Xiaochen Ren, Mercouri G. Kanatzidis, Lei Fang
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants
Sumona Sarkar, Bryan A. Baker, Desu Chen, Patrick S. Pine, Jennifer H. McDaniel, Marc L. Salit, Wolfgang Losert, Carl G. Simon Jr., Joy P. Dunkers
Nanofiber technology has emerged as a promising tool to recapitulate the native extracellular matrix structure; however the properties of nanofibers governing cell-material interactions are still largely undetermined. In this study we have systematically
Yaw S. Obeng, Chukwudi A. Okoro, Papa K. Amoah, Victor H. Vartanian
In this paper, we attempt to understand the physico-chemical changes that occur in devices during device burn-in. We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects present in the
Brian Alberding, Adam Biacchi, Angela R. Hight Walker, Edwin J. Heilweil
Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient is the visible range, and consists of earth abundant, non-toxic elements. For these reasons, SnS has generated much interest for incorporation
Kai Hao, Lixiang Xu, Philip Nagler, Akshay Singh, Kha Tran, Chandriker K. Dass, Rupert Huber, Tobias Korn, Xiaoqin Li, Galan Moody
The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport
Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, D. E. Ioannou, Kin P. Cheung
One of the most serious technology roadblocks for SiC DMOSFETs is the significant occurrence of early failures in time-dependent-dielectric-breakdown (TDDB) testing. Conventional screening methods have proved ineffective because the remaining population is
Adam F. Hannon, Daniel F. Sunday, Donald A. Windover, Regis J. Kline
We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov Chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings
Alexana Roshko, Jaclyn Sprenger, Andrew S. Cavanagh, Steven George, Huaxing Sun, Kathryn J. Wahl
Low energy electrons may provide mechanisms to enhance thin film growth at low temperatures. In this work, gallium nitride (GaN) films were deposited over areas of ~5 cm2 at room temperature and 100 C using electrons with a low energy of 50 eV from an
Jonghan Kwon, Chao-Yang Chen, Abhishek Sharma, Andrea Fantini, Malgorzata Jurczak, James A. Bain, Yoosuf Picard, Marek Skowronski, Andrew Herzing
We present data on the filament size and temperature distribution in Hf0.82Al0.18Ox-based Resistive Random Access Memory (RRAM) devices obtained by transient thermometry and high- resolution transmission electron microscopy (HRTEM). The thermometry shows
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some capability to image sub-surface structure, including the details of buried interfaces. This paper describes the theoretical and practical basis for obtaining information about shallow buried interfaces
Yaw S. Obeng, Chukwudi A. Okoro, Pavel Kabos, Rhonda R. Franklin, Papa K. Amoah
In this paper, we discuss the use of low frequency (up to 300 MHz) radio waves (RF) to detect and characterize electrical defects present in the dielectrics of emerging integrated circuit devices. As an illustration, the technique is used to monitor the
Networked sensors (a. k. a., Internet of Things (IoT)) represents a new era in the evolution of telecommunications made possible by the reduced cost of performance in electronic devices. This is the era where even the most mundane items are connected to
Tariq Ahmido, William A. Kimes, Brent A. Sperling, Joseph T. Hodges, James E. Maslar
Water is often employed as the oxygen source in metal oxide atomic layer deposition (ALD) processes. It has been reported that variations in the amount of water delivered during metal oxide ALD can impact the oxide film properties. Hence, one contribution
Richard A. Allen, David T. Read, Victor H. Vartanian, Winthrop A. Baylies, William Kerr, Mark Plemmons, Kevin T. Turner
A round robin experiment to compare the sensitivities of various metrology tools to small voids between bonded wafers such as are used in three-dimensional stacked integrated circuits (3DS-ICs) and MEMS packaging. Participants received a set of four bonded
This paper examines the current issues pertaining to the hardware security and how they could affect the overall security of applications such as the internet of things. Specifically, we review the ongoing industry-led activities aimed at mitigating the
Adam M. Behrens, Jeffrey J. Kim, Nathan A. Hotaling, Jonathan Seppala, Peter Kofinas, Wojtek J. Tutak
Polymer nanofiber based materials have been widely investigated for use as tissue engineering scaffolds. While promising, these materials are typically fabricated through techniques that require significant time or cost. Here we report a cost effective
Organic-inorganic halide CH 3NH 3PbI 3 solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to the strong spin