Black phosphorus tunneling field-effect transistors
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome the thermionic limit, that results intrinsically in subthreshold swings of at least 60 mV/dec at room temperature1, 5, 6. Here we demonstrate TFETs based on few-layer black phosphorus, in which multiple top gates create electrostatic doping in the source and drain regions. By electrically tuning the doping types and levels in the source and drain regions, the device can be reconfigured to allow for TFET or MOSFET operation and can be tuned to be n-type or p-type. After a careful quantitative comparison of the experimental data with self-consistent atomistic simulations, we also project the performance of black phosphorus TFETs for scaled channel and oxide thicknesses.