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Electronics

Semiconductors

Search Publications

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Displaying 201 - 225 of 748

Biofilm Over Teeth and Restorations, What Do We Need to Know?

March 31, 2017
Author(s)
Nancy Lin
Objectives The goal of this paper is to provide an overview of biofilms and biofilm measurements in the context of studying biofilms on tooth and dental material surfaces to improve oral health. Methods A historical perspective and terminology is presented

Assessing the wavelength extensibility of optical patterned defect inspection

March 29, 2017
Author(s)
Bryan Barnes, Hui Zhou, Mark-Alexander Henn, Martin Sohn, Richard M. Silver
Qualitative comparisons have been made in the literature between the scattering off deep- subwavelength-sized defects and the scattering off spheres in free space to illustrate the challenges of optical defect inspection with decreasing patterning sizes

Rapid determination of nanowire electrical properties using a dielectrophoresis-well based system

March 28, 2017
Author(s)
Sergiy Krylyuk, Albert Davydov, Marios Constantinou, Kai F. Hoettges, Grigorios P. Rigas, Vlad Stolojan, Maxim Shkunov
The use of high quality semiconducting nanomaterials for advanced device applications has been hampered by the unavoidable variability in the growth of one-dimensional (1D) nanomaterials such as nanowires (NWs) and nanotubes, resulting in highly variable

Superconducting Optoelectronic Circuits for Neuromorphic Computing

March 23, 2017
Author(s)
Jeffrey M. Shainline, Sonia M. Buckley, Richard P. Mirin, Sae Woo Nam
We propose a hybrid semiconductor-superconductor hardware platform for the implementation of neural networks and large-scale neuromorphic computing. The platform combines semiconducting few-photon light-emitting diodes with superconducting-nanowire single

Frontiers of Characterization and Metrology for Nanoelectronics: 2017

March 20, 2017
Author(s)
Erik M. Secula, David G. Seiler
The 2017 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN) has the goal of bringing together scientists and engineers interested in all aspects of the characterization and measurement technology needed for

Experimental and statistical methods to evaluate antibacterial activity of a quaternary pyridinium salt on planktonic, biofilm-forming, and biofilm states

March 3, 2017
Author(s)
Daneli Lopez-Perez, Paula J. Baker, Adam L. Pintar, Jirun Sun, Nancy Lin, Sheng Lin-Gibson
Robust evaluation and comparison of antimicrobial technologies are critical to improving biofilm prevention and treatment. Herein, a multi-pronged experimental framework and statistical models were applied to determine the effects of quaternary pyridinium

Bonded Wafers for Three-Dimensional Integration

March 2, 2017
Author(s)
Richard A. Allen
Three-dimensional (3D) integration is a key enabling technology for compact, high-performance, and/or low-power electronics. This technology enables the fabrication of circuits with functions that commonly cannot be fabricated on a single substrate in a

Coupled Bilayer Photonic Crystal Slab Electro-Optic Spatial Light Modulators

March 1, 2017
Author(s)
Yichen Shuai, Deyin Zhao, Corey A. Stambaugh, John R. Lawall, Weidong Zhou, Yonghao Liu
We demonstrate here a surface-normal ultracompact Fano resonance electrooptic spatial light modulator employing a stacked photonic crystal membrane capacitor-like structure. Vertically coupled optical resonance near 1.5 μm was observed, and both blue and

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

January 23, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the

Structure and Order in Organic Semiconductors

January 17, 2017
Author(s)
Chad R. Snyder, Dean M. DeLongchamp, Ryan C. Nieuwendaal, Andrew A. Herzing
Several techniques for characterizing semiconducting polymer order on different length scales are presented, including (1) differential scanning calorimetry (DSC), (2) solid state nuclear magnetic resonance spectroscopy (NMR), (3) transmission electron

Advances in RRAM technology: identifying and mitigating roadblocks

January 13, 2017
Author(s)
Dmitry Veksler, Gennadi Bersuker
The filament-based RRAM has demonstrated superior scalability, endurance, low power operation, retention, and operating speed. A challenge navigating trade-offs between high density, low switching power, and stability can be addressed by capitalizing on

InGaAs Inversion Layer Mobility and Interface Trap Density from Gated Hall Measurements

December 12, 2016
Author(s)
Thenappan Chidambaram, Dmitry Veksler, S Madisetti, Michael Yakimov, Vadim Tokranov, Serge Oktyabrskiy
In this work, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density in the channel

Atomically precise device fabrication

December 7, 2016
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Richard M. Silver, Curt A. Richter
An improved capacity to control matter at the atomic scale is central to the advancement of nanotechnology. The complementary metal-oxide-semiconductor (CMOS) devices that power existing computing technology, which continue to scale down in size as

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

November 8, 2016
Author(s)
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected STEM

Calibration of Effective Tunneling Bandgap in GaAsSb/InGaAs for improved TFET Performance Prediction

November 3, 2016
Author(s)
Quentin Smets, Anne S. Verhulst, Salim El Kazzi, David J. Gundlach, Curt A. Richter, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
The effective bandgap for heterojunction band-to-band tunneling (Eg,eff) is a crucial design parameter for heterojunction TFET. However, there is significant uncertainty on Eg,eff, especially for In0.53Ga0.47As/GaAs0.5Sb0.5. This makes TFET performance
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