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Aruna N. Ramanayaka, Ke Tang, Joseph A. Hagmann, Hyun S. Kim, David S. Simons, Curt A. Richter, Joshua M. Pomeroy
Across solid state quantum information, material deficiencies limit performance through enhanced relaxation, charge defect motion, or isotopic spin noise. While classical measurements of device performance provide cursory guidance, specific qualifying
Bryan M. Barnes, Mark-Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
To advance computational capabilities beyond conventional scaling limitations, novel device architectures enabled by emerging materials may be required. Optics-based methodologies, central to modern-day process control, will be pursued by the
Albert Davydov, Sergiy Krylyuk, Kyle J. DiCamillo, Makarand Paranjape, Wendy Shi
An automated technique is presented for mechanically exfoliating single-layer and few-layer transition metal dichalcogenides using controlled shear and normal forces imposed by a parallel plate rheometer. A thin sample that is removed from bulk MoS2 or
Ke Tang, Hyun S. Kim, Aruna N. Ramanayaka, David S. Simons, Joshua M. Pomeroy
An ultra-high-vacuum (UHV) compatible Penning ion source for growing pure, highly enriched 28Si epitaxial thin films is presented. Enriched 28Si is a critical material for quantum information due to the elimination of nuclear spins and, in some cases, must
Mengwei Si, Xiao Lyu, Pragya Shrestha, Xing Sun, Haiyan Wang, Kin P. Cheung, Peide Ye
The ultrafast measurements of polarization switching dynamics on ferroelectric (FE) and antiferroelectric (AFE) hafnium zirconium oxide (HZO) are studied. The transient current during the polarization switching process is probed directly on the nanosecond
Brian D. Hoskins, Matthew W. Daniels, Siyuan Huang, Advait Madhavan, Gina C. Adam, Nikolai B. Zhitenev, Jabez J. McClelland, Mark D. Stiles
Neuromorphic networks based on nanodevices, such as metal oxide memristors, phase change memories, and flash memory cells, have generated considerable interest for their increased energy efficiency and density in comparison to graphics processing units
Kamal Choudhary, Aaron G. Kusne, Francesca M. Tavazza, Jason R. Hattrick-Simpers, Rama K. Vasudevan, Apurva Mehta, Ryan Smith, Lukas Vlcek, Sergei V. Kalinin, Maxim Ziatdinov
The use of advanced data analytics, statistical and machine learning approaches (AI) to materials science has experienced a renaissance, driven by advances in computer sciences, availability and access of software and hardware, and a growing realization
Here, we present a method for measuring dimensions of nanostructures using specular reflection of electrons from an opaque surface. Development of this method has been motivated by measurement needs of the semiconductor industry, but it can also be more
Advait Madhavan, Georgios Tzimpragos, Mark D. Stiles, Timothy Sherwood
Our community has been exploring Time-of-arrival based codes as a candidate for very low energy information processing. A ``space-time'' algebra has been recently proposed that captures the essential features of such a paradigm. In order to gain some
Kristine A. Bertness, Thomas Wilhelm, Alex Kohlberg, Mohadeseh Baboli, Alireza Abrand, Parsian Mohseni
A highly practical nanofabrication process is detailed here for the generation of black GaAs. Discontinuous thin films of Au nanoparticles are electrodeposited onto GaAs substrates to catalyze site-specific etching in a solution of KMnO4 and HF according
Electronic systems are ubiquitous today, playing an irreplaceable role in our personal lives as well as in critical infrastructures such as power grid, satellite communication, and public transportation. In the past few decades, the security of software
Hilary M. Hurst, Yun-Pil Shim, Rusko Ruskov, Charles Tahan
We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We show that a single