Induced quantum dot probe for materials characterization

Published

April 19, 2019

Author(s)

Hilary M. Hurst, Yun-Pil Shim, Rusko Ruskov, Charles Tahan

Abstract

We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We show that a single wire can create the dot, determine if an electron is present, and be used to measure critical device parameters. Adding more wires enables more complicated (potentially multi-dot) systems and measurements. As one application for this concept we consider silicon metal-oxide-semiconductor (MOS) and silicon/silicon-germanium quantum dot qubits relevant to quantum computing and show how to measure low-lying excited states (so-called \valley" states). This approach provides an alternative method for characterization of parameters that are critical for various semiconductor- based quantum dot devices without fabricating such devices.

Citation

Applied Physics Letters

Pub Type

Journals

Download Paper

https://doi.org/10.1063/1.5053756

Local Download

Citation

Hurst, H. , Shim, Y. , Ruskov, R. and Tahan, C. (2019), Induced quantum dot probe for materials characterization, Applied Physics Letters, [online], https://doi.org/10.1063/1.5053756 (Accessed December 11, 2023)