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Electronics

Semiconductors

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Displaying 151 - 175 of 1445

Contact resistance in organic field-effect transistors: conquering the barrier

May 15, 2020
Author(s)
Matthew Waldrip, Oana Jurchescu, David J. Gundlach, Emily Bittle
Organic semiconductors have sparked significant interest due to their inherent properties as flexible, solution processible, and chemically tunable electronic materials. In the last 10 years, the improvements in charge carrier mobility in small molecule

Optimization of photoluminescence from W centers in silicon-on-insulator for waveguide-coupled sources

May 13, 2020
Author(s)
Sonia M. Buckley, Alexander N. Tait, Galan Moody, Kevin L. Silverman, Sae Woo Nam, Richard P. Mirin, Jeffrey M. Shainline, Stephen Olson, Joshua Hermann, Satyvalu Papa Rao
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218\textmu m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diode sources. Here we optimize

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

April 21, 2020
Author(s)
Ju Ying Shang, Michael J. Moody, Jiazhen Chen, Sergiy Krylyuk, Albert Davydov, Tobin J. Marks, Lincoln J. Lauhon
Layered transition metal dichalcogenides (TMDs) and two-dimensional (2D) materials are widely studied as complements to Si complementary metal-oxide-semiconductor technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

April 6, 2020
Author(s)
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve ultrasensitive and highly spatially localized tip-enhanced Raman scattering (TERS). Recent work has

Auto-tuning of double dot devices it in situ with machine learning

March 31, 2020
Author(s)
Justyna Zwolak, Thomas McJunkin, Sandesh Kalantre, J. P. Dodson, Evan MacQuarrie, D. E. Savage, M. G. Lagally, S N. Coppersmith, Mark A. Eriksson, Jacob Taylor
The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time- consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the \it in situ} implementation of a

Nanoscale MOSFET as a potential Room-Temperature Quantum Current Source

March 31, 2020
Author(s)
Kin P. Cheung, Jason P. Campbell
Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge

X-Ray Metrology of Nanowire/ Nanosheet FETs for Advanced Technology Nodes

March 30, 2020
Author(s)
Madhulika S. Korde, Regis J. Kline, Daniel Sunday, Nick Keller, Subhadeep Kal, Cheryl Alix, Aelen Mosden, Alain C. Diebold
The three-dimensional architectures for field effect transistors (FETs) with vertical stacking of Gate-all-Around Nanowires provide a pathway to increased device density and superior electrical performance. However, the transition from research into

Targeted enrichment of 28Si thin films for quantum computing

March 9, 2020
Author(s)
Ke Tang, Hyun S. Kim, Aruna N. Ramanayaka, David S. Simons, Joshua M. Pomeroy
We report on the growth of isotopically enriched 28Si epitaxial films with precisely controlled enrichment levels, ranging from natural abundance ratio of 92.2% all the way to 99.99987 % (0.832 × 10-6 mol/mol 29Si). Isotopically enriched 28Si is regarded

Carrier mobility of silicon by sub-bandgap time-resolved terahertz spectroscopy

February 26, 2020
Author(s)
Timothy J. Magnanelli, Edwin J. Heilweil
Low density charge mobility from below bandgap, two-photon photoexcitation of bulk Silicon (Si) is interrogated using time-resolved terahertz spectroscopy (TRTS). Total charge mobility is measured as a function of excitation frequency and fluence (charge

Use of quantum effects as potential qualifying metrics for "quantum grade silicon"

December 30, 2019
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph A. Hagmann, Hyun S. Kim, David S. Simons, Curt A. Richter, Joshua M. Pomeroy
Across solid state quantum information, material deficiencies limit performance through enhanced relaxation, charge defect motion, or isotopic spin noise. While classical measurements of device performance provide cursory guidance, specific qualifying
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