Optimization of photoluminescence from W centers in silicon-on-insulator for waveguide-coupled sources
Sonia M. Buckley, Alexander N. Tait, Galan Moody, Kevin L. Silverman, Sae Woo Nam, Richard P. Mirin, Jeffrey M. Shainline, Stephen Olson, Joshua Hermann, Satyvalu Papa Rao
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218\textmu m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diode sources. Here we optimize the implant energy, fluence and anneal conditions for the substrate used for waveguide-integrated devices, and observe near two orders of magnitude improvement in photoluminescence intensity relative to our previous work. We further show that such light sources are compatible with a 300 mm foundry process by demonstrating photoluminescence of similar intensity from 300-mm SOI wafers. We demonstrate uniformity of luminescence across the wafer that is within the measurement error.