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PUBLICATIONS

First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

Published

Author(s)

Pragya R. Shrestha, xiao Lyu, Mengwei Si, Kin P. Cheung, Pei D. Ye

Abstract

In this work, we report on an ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with a crossbar metal-insulator-metal (MIM) structure. A record low sub-nanosecond characteristic switching time of 925 ps was achieved, supported by the nucleation limited switching model. The impact of electric field, film thickness and device area on the polarization switching speed is systematically studied.
Proceedings Title
IEEE International Electron Devices Meeting (IEDM)
Conference Dates
December 7-11, 2019
Conference Location
SAn Francisco, CA
Pub Type
Conferences

Download Paper

https://doi.org/10.1109/IEDM19573.2019.8993509
Local Download
Semiconductors

Citation

Shrestha, P. , Lyu, X. , Si, M. , Cheung, K. and Ye, P. (2020), First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide, IEEE International Electron Devices Meeting (IEDM), SAn Francisco, CA, [online], https://doi.org/10.1109/IEDM19573.2019.8993509 (Accessed October 20, 2025)

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Created February 13, 2020, Updated May 13, 2020
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