First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Kin P. Cheung, Pei D. Ye
In this work, we report on an ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with a crossbar metal-insulator-metal (MIM) structure. A record low sub-nanosecond characteristic switching time of 925 ps was achieved, supported by the nucleation limited switching model. The impact of electric field, film thickness and device area on the polarization switching speed is systematically studied.
IEEE International Electron Devices Meeting (IEDM)
, Lyu, X.
, Si, M.
, Cheung, K.
and Ye, P.
First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide, IEEE International Electron Devices Meeting (IEDM), SAn Francisco, CA, [online], https://doi.org/10.1109/IEDM19573.2019.8993509
(Accessed October 27, 2021)