Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Ultrafast Measurements of Polarization Switching Dynamics on Ferroelectric and Anti- Ferroelectric Hafnium Zirconium Oxide

Published

Author(s)

Mengwei Si, Xiao Lyu, Pragya Shrestha, Xing Sun, Haiyan Wang, Kin P. Cheung, Peide Ye

Abstract

The ultrafast measurements of polarization switching dynamics on ferroelectric (FE) and antiferroelectric (AFE) hafnium zirconium oxide (HZO) are studied. The transient current during the polarization switching process is probed directly on the nanosecond scale. The switching time is determined to be as fast as 10 ns to reach fully switched polarization with characteristic switching times of 5.4 ns for FEHZO and 4.5 ns for AFE HZO by the nucleation limited switching model. The limitation by the parasitic effect on capacitor charging is found to be critical in the correct and accurate measurements of intrinsic polarization switching speed of HZO.
Citation
Applied Physics Letters
Volume
115
Issue
7

Citation

Si, M. , Lyu, X. , Shrestha, P. , Sun, X. , Wang, H. , Cheung, K. and Ye, P. (2019), Ultrafast Measurements of Polarization Switching Dynamics on Ferroelectric and Anti- Ferroelectric Hafnium Zirconium Oxide, Applied Physics Letters, [online], https://doi.org/10.1063/1.5098786, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=928642 (Accessed April 19, 2024)
Created August 13, 2019, Updated October 12, 2021