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Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs



Quentin Smets, Jihong Kim, Jason Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns


Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) generation cause unwanted leakage current. In this paper, we study these degradation mechanisms using pulsed I-V measurements and simulations. Our simulations show oxide trap charging can be fully suppressed by pulsed-IV, unlike SRH and TAT. We demonstrate suppressed oxide trap charging and improved transfer characteristics using cryogenic pulsed I-V .
IEEE Transactions on Electron Devices


tunnel field effect transistor, TFET, pulsed I-V, heterojunction


Smets, Q. , Kim, J. , Campbell, J. , Nminibapiel, D. , Veksler, D. , Shrestha, P. , Pandey, R. , Verhulst, A. , Simoens, E. , Gundlach, D. , Richter, C. , Cheung, K. , Suman, S. , Mocuta, A. , Collaert, N. , Thean, A. and Heyns, M. (2017), Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs, IEEE Transactions on Electron Devices, [online], (Accessed June 19, 2024)


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Created March 31, 2017, Updated October 12, 2021