Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs

Published

April 1, 2017

Author(s)

Quentin Smets, Jihong Kim, Jason Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns

Abstract

Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) generation cause unwanted leakage current. In this paper, we study these degradation mechanisms using pulsed I-V measurements and simulations. Our simulations show oxide trap charging can be fully suppressed by pulsed-IV, unlike SRH and TAT. We demonstrate suppressed oxide trap charging and improved transfer characteristics using cryogenic pulsed I-V .

Citation

IEEE Transactions on Electron Devices

Volume

64

Issue

4

Pub Type

Journals

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DOI Link

Keywords

tunnel field effect transistor, TFET, pulsed I-V, heterojunction

Citation

Smets, Q. , Kim, J. , Campbell, J. , Nminibapiel, D. , Veksler, D. , Shrestha, P. , Pandey, R. , Verhulst, A. , Simoens, E. , Gundlach, D. , Richter, C. , Cheung, K. , Suman, S. , Mocuta, A. , Collaert, N. , Thean, A. and Heyns, M. (2017), Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs, IEEE Transactions on Electron Devices, [online], https://doi.org/10.1109/TED.2017.2670660 (Accessed October 11, 2024)