Published: March 02, 2016
Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kristine A. Bertness
The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich growth conditions, respectively. Short and low-density GaN nanowires were then grown on each AlN polarity type. PFM measurements verified the expected AlN layer polarity and further indicated that N-polar nanowires are produced for growths on both AlN polarity types. Cross-section scanning transmission electron microscopy (STEM) images further reveal that the nanowires on Al-polar AlN films are nucleated on inversion domains in the AlN layer, resulting in mixed polarity in the nanowire. PFM measurements were found to be a convenient technique for mapping the polarity of GaN nanowires, particularly when coupled with complementary STEM measurements made in cross section.
Citation: Materials Science in Semiconductor Processing
Pub Type: Journals
Gallium Nitride, Nanowires, Crystallographic Polarity, Piezoresponse Force Microscopy
Created March 02, 2016, Updated November 10, 2018