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Mobility overestimation due to gated contacts in organic field-effect transistors

Published

Author(s)

Emily G. Bittle, David J. Gundlach, Oana Jurchescu, James I. Basham, Thomas Jackson

Abstract

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more.
Citation
Nature Communication
Volume
7

Citation

Bittle, E. , Gundlach, D. , Jurchescu, O. , Basham, J. and Jackson, T. (2016), Mobility overestimation due to gated contacts in organic field-effect transistors, Nature Communication, [online], https://doi.org/10.1038/NCOMMS10908 (Accessed July 25, 2024)

Issues

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Created March 10, 2016, Updated November 10, 2018