Gerbig, Y.
, Michaels, C.
, Cook, R.
and Bradby, J.
(2015),
In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions, Physical Review B, [online], https://doi.org/10.1103/PhysRevB.92.214110
(Accessed April 16, 2024)
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In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions
Published
Author(s)
, , , Jodie E. Bradby
Abstract
Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. The obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.Citation
Physical Review B
Volume
92
Pub Type
Journals
Download Paper
Keywords
Raman spectroscopy, in situ , indentation, amorphous silicon
Citation
Created December 17, 2015, Updated November 10, 2018