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Field Effects of Current Crowding at Metal-MoS2 Contacts

Published

Author(s)

Hui H. Yuan, Guangjun Cheng, Sheng Yu, Angela R. Hight Walker, Curt A. Richter, Qiliang Li

Abstract

Gate assisted contact-end Kelvin test structures and gate assisted 4-probe structures have been designed and fabricated to measure the field effects of current crowding at the source/drain contacts of top-gate MoS2 field effect transistors. The transistors exhibited n-type transistor characteristics. The source/drain contact resistance was characterized by using both gate-assisted Kelvin and gate-assisted 4-probe structures. The values of contact resistance measured by these two test structures are significantly different. The contact-front contact resistance obtained from the 4-probe structure is significantly influenced by field effects on current crowding, while the contact-end resistance obtained from the Kelvin test structure is not. The metal-MoS2 contact current transfer length, LT, can be determined from the comparison between these two measurements: LT was observed to increase linearly with increasing gate voltage. By using the combination of both gate-assisted test structures the contact characteristics can be more precisely measured then by using just one type.
Citation
Applied Physics Letters

Keywords

Nanoelectronics, MoS2, two-dimensional materials, transistor, metal-semiconductor contacts

Citation

Yuan, H. , Cheng, G. , Yu, S. , Hight Walker, A. , Richter, C. and Li, Q. (2016), Field Effects of Current Crowding at Metal-MoS2 Contacts, Applied Physics Letters, [online], https://doi.org/10.1063/1.4942409, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917989 (Accessed July 20, 2024)

Issues

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Created March 9, 2016, Updated October 12, 2021