Gerbig, Y.
, Michaels, C.
and Cook, R.
(2016),
In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films, Scripta Materialia, [online], https://doi.org/10.1016/j.scriptamat.2016.04.007
(Accessed October 20, 2025)
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In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films
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Abstract
The pressure induced phase transitions of crystalline Si films was studied in situ under a Berkovich probe using the Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases.Citation
Scripta Materialia
Volume
120
Pub Type
Journals
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Keywords
Raman spectroscopy, Silicon, Phase transitions, Nanoindentation
Citation
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Created April 19, 2016, Updated May 8, 2020