Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films

Published

Author(s)

Yvonne B. Gerbig, Chris A. Michaels, Robert F. Cook

Abstract

The pressure induced phase transitions of crystalline Si films was studied in situ under a Berkovich probe using the Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases.
Citation
Scripta Materialia
Volume
120

Keywords

Raman spectroscopy, Silicon, Phase transitions, Nanoindentation

Citation

Gerbig, Y. , Michaels, C. and Cook, R. (2016), In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films, Scripta Materialia, [online], https://doi.org/10.1016/j.scriptamat.2016.04.007 (Accessed June 2, 2023)
Created April 19, 2016, Updated May 8, 2020