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PUBLICATIONS

In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films

Published

Author(s)

Yvonne B. Gerbig, Chris A. Michaels, Robert F. Cook

Abstract

The pressure induced phase transitions of crystalline Si films was studied in situ under a Berkovich probe using the Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases.
Citation
Scripta Materialia
Volume
120
Pub Type
Journals

Download Paper

https://doi.org/10.1016/j.scriptamat.2016.04.007
Local Download

Keywords

Raman spectroscopy, Silicon, Phase transitions, Nanoindentation
Semiconductors, Metrology and Materials

Citation

Gerbig, Y. , Michaels, C. and Cook, R. (2016), In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films, Scripta Materialia, [online], https://doi.org/10.1016/j.scriptamat.2016.04.007 (Accessed December 11, 2024)

Issues

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Created April 19, 2016, Updated May 8, 2020