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Advanced packaging involves increasingly challenging requirements for heterogeneous integration and chiplet packaging. Needs such as fine pitch interconnects (
Electron, ion and photon-based microanalysis methods, instrumentation and protocols are developed to advance measurement science towards the elemental and
The semiconductor industry continues to push for smaller features, more integration, and increased yield. New photoresist chemistries and advances in extreme
The exponential growth in the power electronics market requires efficient devices based on wide bandgap (WBG) semiconductors. The yield of power devices is
Transmission electron imaging and diffraction in an SEM are powerful tools that can be utilized in settings ranging from academia to small business, to
The semiconductor industry requires sub-nanometer, 3-dimensional quantitative elemental mapping of materials, nanoscale structures, and devices with high
This project employs a causal Green’s function (CGF) method to model thermal transport in nanoscale semiconductors, overcoming limitations posed by the Fourier
An accurate characterization of how the wireless signal propagates through different environments and frequency bands, is key to developing radio frequency (RF)
Some of the manufacturing difficulties encountered by the heterogeneous integration of modular chips in system-in-package are due to thermal management and
This project focuses on understanding the potential for nanoscale engineered materials to advance state-of-the-art spectroscopic techniques and foster the
The semiconductor industry is in need of new, high throughput in-line dimensional metrology methods to characterize next generation 3D nanostructures. The
Optical systems that operate at wavelengths in the ultraviolet (UV) and extreme-ultraviolet (EUV) are susceptible to degradation by a number of different
Nano and atomic scale theory of the electronic, optical and mechanical properties of ultrasmall structures, such as semiconductor quantum dots and dopants in Si
Our goal is to develop and demonstrate precise measurement methods that quantify the physical shape, critical dimensions (CD) and the structure of nanoscale
The Dynamic EUV Imaging and Spectroscopy for Microelectronics program in the Spin Electronics group makes use of an ultra-fast, coherent, extreme ultraviolet
An urgent objective of the microelectronics industry is to mitigate the extreme heat densities generated within devices that are limiting the performance of
Microwave acoustic resonators are widely used to filter signals on multiple frequency bands for mobile communications. To predict filter performance, industry
To provide the necessary information for electronic material manufacturers to predict how and when failures will occur and enable lifetime analysis appropriate
Fundamental understanding of electron-solid interactions is key to interpreting electron microscopy images for quantitative metrology. Scanning electron
Crystalline silicon is a desirable host material for solid state qubits due to potential for electrically controlled interactions between exquisitely isolated
The state of the art for measurement and inspection of the smallest printed features on an integrated circuits (IC) chip is a combination of electron scanning
NIST is engaged in a joint effort between the Material Measurement Laboratory (MML) and the Physical Measurement Laboratory (PML) aimed at revolutionizing 3D
In the vacuum ultraviolet and extreme ultraviolet (EUV), the indices of refraction of all materials become complex: N = n + ik, or N = 1- d + ik. Here, n is the
A variety of gases are used during production of semiconductors for deposition, lithography, etching, doping, annealing, and chamber cleaning. These processes