U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Bryan Barnes (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 68

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

February 24, 2024
Author(s)
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors, few-donor/quantum dot devices for spin manipulation and arrayed few-donor devices for analog

INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMSTM 2023 EDITION METROLOGY

December 8, 2023
Author(s)
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

Measurement sensitivity of DUV scatterfield microscopy parameterized with partial coherence for duty ratio-varied periodic nanofeatures

February 1, 2022
Author(s)
Taekyung Kim, Eikhyun Cho, Yoon Sung Bae, Sang-Soo Choi, Bryan Barnes, Richard M. Silver, Martin Sohn
The deep ultraviolet (DUV) scatterfield imaging microscopy technique enables accurate dimensional measurements of periodic nanostructures with sub-nanometer sensitivity to support semiconductor device manufacturing. A parametric sensitivity analysis for

Appraising the extensibility of optics-based metrology for emerging materials

October 4, 2019
Author(s)
Bryan M. Barnes, Mark-Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
To advance computational capabilities beyond conventional scaling limitations, novel device architectures enabled by emerging materials may be required. Optics-based methodologies, central to modern-day process control, will be pursued by the

Data-driven approaches to optical patterned defect detection

September 5, 2019
Author(s)
Mark-Alexander Henn, Hui Zhou, Bryan M. Barnes
Computer vision and classification methods have become increasingly popular in recent years due to ever-increasing computation power. While advances in semiconductor devices are the basis for this growth, few publications have probed the benefits of data

Assessing form-dependent optical scattering at vacuum- and extreme-ultraviolet wavelengths off nanostructures with two-dimensional periodicity

June 24, 2019
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Several metamaterials and nanostructures are form birefringent, exhibiting effective refractive index differences for orthogonal polarizations due to the placement of subwavelength features if the periodicity is smaller than the incident wavelength. As the

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Evaluating the Effects of Modeling Errors for Isolated Finite 3-D Targets

October 19, 2017
Author(s)
Mark Alexander Henn, Bryan M. Barnes, Hui Zhou
Optical 3-D nanostructure metrology utilizes a model-based metrology approach to determine critical dimensions (CDs) that are well below the inspection wavelength. Our project at the National Institute of Standards and Technology is evaluating how to

Combining model-based measurement results of critical dimensions from multiple tools

April 7, 2017
Author(s)
Nien F. Zhang, Bryan M. Barnes, Hui Zhou, Mark Alexander Henn, Richard M. Silver
Model-based measurement techniques use experimental data and simulations of the underlying physics to extract quantitative estimates of the measurands of a specimen based upon a parametric model of that specimen. The uncertainties of these estimates are

Assessing the wavelength extensibility of optical patterned defect inspection

March 29, 2017
Author(s)
Bryan Barnes, Hui Zhou, Mark-Alexander Henn, Martin Sohn, Richard M. Silver
Qualitative comparisons have been made in the literature between the scattering off deep- subwavelength-sized defects and the scattering off spheres in free space to illustrate the challenges of optical defect inspection with decreasing patterning sizes

Evaluating the Effects of Modeling Errors for Isolated Finite3-D Targets

March 29, 2017
Author(s)
Mark-Alexander Henn, Bryan Barnes, Hui Zhou
Optical 3-D nanostructure metrology utilizes a model-based metrology approach to determine critical dimensions (CDs) that are well below the inspection wavelength. Our project at the National Institute of Standards and Technology is evaluating how to

A Library to Enable the Modeling of Optical Imaging of Finite Multi-Line Arrays.

September 30, 2016
Author(s)
Mark Alexander Henn, Bryan M. Barnes
The dataset contains several MATLAB files and input files for the software package JCMsuite that enable the modeling of optical imaging of finite multi-line arrays. (Certain commercial materials are identified in order to specify the experimental procedure

Optimizing Subfield Targets for Nanoscale Quantitative Optical Imaging

September 29, 2016
Author(s)
Mark Alexander Henn, Bryan M. Barnes, Hui Zhou, Martin Y. Sohn, Richard M. Silver
The full 3-D scattered field above finite sets of features has been shown to contain a continuum of spatial frequency information, and with novel optical microscopy techniques and electromagnetic modeling, deep-subwavelength geometrical parameters can be

Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets

April 4, 2016
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrology