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Search Publications by: Bryan Barnes (Fed)

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Displaying 1 - 25 of 137

Lab-based multi-wavelength EUV diffractometry for critical dimension metrology

April 24, 2025
Author(s)
Bryan Barnes, Aaron Chew, Nicholas Jenkins, Yunzhe Shao, Martin Sohn, Regis Kline, Daniel Sunday, Purnima Balakrishnan, Thomas Germer, Steven Grantham, Clay Klein, Stephanie Moffitt, Eric Shirley, Henry Kapteyn, MARGARET MURNANE
Background: The industry is developing extreme-ultraviolet wavelength (EUV) techniques to measure critical dimensions (CDs) in logic fabrication. As nascent approaches are unveiled, evaluations against reference metrologies are essential to motivate

Instrument Development for Spectroscopic Ellipsometry and Diffractometry in the EUV

April 24, 2024
Author(s)
Stephanie Moffitt, Bryan Barnes, Thomas A. Germer, Steven Grantham, Eric Shirley, Martin Sohn, Daniel Sunday, Charles S. Tarrio
Semiconductor devices are noted for ever-decreasing dimensions but now are also becoming more complex. While scanning probe microscopy can still resolve the smallest features, it does not have the throughput for high-volume characterization of full wafers

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

February 24, 2024
Author(s)
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors, few-donor/quantum dot devices for spin manipulation and arrayed few-donor devices for analog

INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMSTM 2023 EDITION METROLOGY

December 8, 2023
Author(s)
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

NIST efforts in extreme-ultraviolet metrology

November 21, 2023
Author(s)
Charles S. Tarrio, Steven Grantham, Rob Vest, Thomas A. Germer, Bryan Barnes, Stephanie Moffitt, Brian Simonds, Matthew Spidell
For several decades, the National Institute of Standards and Technology (NIST) has actively supported metrology programs for extreme ultraviolet (EUV) lithography. We will describe our existing programs in optics lifetime, reflectometry, and radiometry

Measurement sensitivity of DUV scatterfield microscopy parameterized with partial coherence for duty ratio-varied periodic nanofeatures

February 1, 2022
Author(s)
Taekyung Kim, Eikhyun Cho, Yoon Sung Bae, Sang-Soo Choi, Bryan Barnes, Richard M. Silver, Martin Sohn
The deep ultraviolet (DUV) scatterfield imaging microscopy technique enables accurate dimensional measurements of periodic nanostructures with sub-nanometer sensitivity to support semiconductor device manufacturing. A parametric sensitivity analysis for

Appraising the extensibility of optics-based metrology for emerging materials

October 4, 2019
Author(s)
Bryan M. Barnes, Mark-Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
To advance computational capabilities beyond conventional scaling limitations, novel device architectures enabled by emerging materials may be required. Optics-based methodologies, central to modern-day process control, will be pursued by the

Data-driven approaches to optical patterned defect detection

September 5, 2019
Author(s)
Mark-Alexander Henn, Hui Zhou, Bryan M. Barnes
Computer vision and classification methods have become increasingly popular in recent years due to ever-increasing computation power. While advances in semiconductor devices are the basis for this growth, few publications have probed the benefits of data

Assessing form-dependent optical scattering at vacuum- and extreme-ultraviolet wavelengths off nanostructures with two-dimensional periodicity

June 24, 2019
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Several metamaterials and nanostructures are form birefringent, exhibiting effective refractive index differences for orthogonal polarizations due to the placement of subwavelength features if the periodicity is smaller than the incident wavelength. As the