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Search Publications by: Bryan Barnes (Fed)

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Displaying 26 - 50 of 136

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Evaluating the Effects of Modeling Errors for Isolated Finite 3-D Targets

October 19, 2017
Author(s)
Mark Alexander Henn, Bryan M. Barnes, Hui Zhou
Optical 3-D nanostructure metrology utilizes a model-based metrology approach to determine critical dimensions (CDs) that are well below the inspection wavelength. Our project at the National Institute of Standards and Technology is evaluating how to

Combining model-based measurement results of critical dimensions from multiple tools

April 7, 2017
Author(s)
Nien F. Zhang, Bryan M. Barnes, Hui Zhou, Mark Alexander Henn, Richard M. Silver
Model-based measurement techniques use experimental data and simulations of the underlying physics to extract quantitative estimates of the measurands of a specimen based upon a parametric model of that specimen. The uncertainties of these estimates are

Assessing the wavelength extensibility of optical patterned defect inspection

March 29, 2017
Author(s)
Bryan Barnes, Hui Zhou, Mark-Alexander Henn, Martin Sohn, Richard M. Silver
Qualitative comparisons have been made in the literature between the scattering off deep- subwavelength-sized defects and the scattering off spheres in free space to illustrate the challenges of optical defect inspection with decreasing patterning sizes

Evaluating the Effects of Modeling Errors for Isolated Finite3-D Targets

March 29, 2017
Author(s)
Mark-Alexander Henn, Bryan Barnes, Hui Zhou
Optical 3-D nanostructure metrology utilizes a model-based metrology approach to determine critical dimensions (CDs) that are well below the inspection wavelength. Our project at the National Institute of Standards and Technology is evaluating how to

A Library to Enable the Modeling of Optical Imaging of Finite Multi-Line Arrays.

September 30, 2016
Author(s)
Mark Alexander Henn, Bryan M. Barnes
The dataset contains several MATLAB files and input files for the software package JCMsuite that enable the modeling of optical imaging of finite multi-line arrays. (Certain commercial materials are identified in order to specify the experimental procedure

Optimizing Subfield Targets for Nanoscale Quantitative Optical Imaging

September 29, 2016
Author(s)
Mark Alexander Henn, Bryan M. Barnes, Hui Zhou, Martin Y. Sohn, Richard M. Silver
The full 3-D scattered field above finite sets of features has been shown to contain a continuum of spatial frequency information, and with novel optical microscopy techniques and electromagnetic modeling, deep-subwavelength geometrical parameters can be

Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets

April 4, 2016
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrology