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Search Publications by: Bryan Barnes (Fed)

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Displaying 51 - 75 of 137

Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets

April 4, 2016
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrology

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.

November 12, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, John S. Villarrubia, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Andras Vladar, Bin Ming
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for

Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization

November 5, 2015
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson, Mark Alexander Henn
Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier optical

Quantitative tool characterization of a 193 nm scatterfield microscope

September 9, 2015
Author(s)
Martin Y. Sohn, Bryan M. Barnes, Hui Zhou, Richard M. Silver
Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, which

Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology

April 14, 2015
Author(s)
Richard M. Silver, Bryan M. Barnes, Martin Y. Sohn, Hui Zhou
Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers and

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression

March 19, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Bin Ming, Andras Vladar, John S. Villarrubia
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for

Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection

February 11, 2015
Author(s)
Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Andras Vladar, Richard M. Silver
Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography

Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model

April 14, 2014
Author(s)
Richard M. Silver, Bryan Barnes, Nien F. Zhang, Hui Zhou, Andras Vladar, John S. Villarrubia, Regis J. Kline, Daniel Sunday, Alok Vaid
There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a single

Optical volumetric inspection of sub-20 nm patterned defects with wafer noise

April 2, 2014
Author(s)
Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Richard M. Silver, Andras Vladar, Abraham Arceo
We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

October 25, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M. Silver, Abraham Arceo
Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved