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Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study

Published

Author(s)

Richard M. Silver, Thomas A. Germer, Ravikiran Attota, Bryan M. Barnes, B Bunday, J Allgair, Egon Marx, Jay S. Jun

Abstract

This paper is a comprehensive summary and analysis of a SEMATECH funded project to study the limits of optical critical dimension scatterometry.  The project was focused on two primary elements: 1) the comparison, stability, and validity of industry models and 2) a comprehensive analysis of process stacks to evaluate the ultimate sensitivity and limits of OCD.  Modeling methods are a requirement for the interpretation and quantitative analysis of scatterometry data.  The four models evaluated show good agreement over a range of targets and geometries for zero order specular reflection as well as higher order diffraction.  A number of process stacks and geometries representing semiconductor manufacturing nodes from the 45 nm node to the 18 nm node were simulated using several measurement modalities including angle-resolved scatterometry and spectrally-resolved scatterometry, measuring various combinations of intensity and polarization. It is apparent in the results that large differences are observed between those methods that rely upon unpolarized and single polarization measurements.
Proceedings Title
Proceedings of SPIE
Volume
6518
Conference Dates
February 1, 2007
Conference Location
San Jose, CA
Conference Title
Metrology, Inspection, and Process Control for Microlithography XXI

Keywords

electromagnetic scattering, optical critical dimension scatterometry, optical modeling, sensitivity and limits, zero order specular reflection

Citation

Silver, R. , Germer, T. , Attota, R. , Barnes, B. , Bunday, B. , Allgair, J. , Marx, E. and Jun, J. (2007), Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study, Proceedings of SPIE, San Jose, CA (Accessed May 29, 2024)

Issues

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Created January 1, 2007, Updated February 19, 2017