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Dimensional measurement sensitivity analysis for a MoSi photomask using DUV reflection scatterfield imaging microscopy



Martin Y. Sohn, Dong R. Lee, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver, Sang-Soo Choi


A critical challenge in optical critical dimension metrology, where requires high measurement sensitivity as well as high throughput, is the dimensional measurements of features sized below the optical resolution limit. This paper investigates the relationships among dimensional sensitivity and key illumination beam conditions (e.g., angular illumination, partial coherence) for photomask feature characterization. Scatterfield images at the edge areas of multiple line structures on a MoSi photomask are analyzed to establish sensitivity to dimensional changes. Actinic scatterfield imaging experiments for these features are performed using the NIST 193 nm Scatterfield Microscope, designed to enable engineered illumination beams at the target. Illumination configurations that improve sensitivity are identified from the imaging of the edges of multiple line targets having linewidths and spaces of about 1/3 wavelength.
Proceedings Title
SPIE Photomask Technology
Conference Dates
September 11-14, 2017
Conference Location
Monterey, CA
Conference Title
SPIE Photomask Technology and EUV Lithography


Optical critical dimension metrology, scatterfield imaging microscopy, measurement sensitivity, partial coherence factor, illumination engineering


Sohn, M. , Lee, D. , Barnes, B. , Dixson, R. , Silver, R. and Choi, S. (2017), Dimensional measurement sensitivity analysis for a MoSi photomask using DUV reflection scatterfield imaging microscopy, SPIE Photomask Technology, Monterey, CA, [online], (Accessed July 14, 2024)


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Created November 8, 2017, Updated November 10, 2018