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Search Publications by: Steven Grantham (Fed)

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Displaying 26 - 50 of 63

A Low Cost Fiducial Reference for Computed Tomography

November 11, 2008
Author(s)
Zachary H. Levine, Steven Grantham, Daniel S. Sawyer, Anthony P. Reeves, David F. Yankelevitz
Rationale and Objectives. To detect the growth in lesions, it is necessary to ensure that the apparent changes in size are above the noise floor of the system. By introducing a fiducial reference, it may be possible to detect smaller changes in lesion size

Quantitative Measurement of Outgas Products From EUV Photoresists

March 14, 2008
Author(s)
Charles S. Tarrio, Bruce A. Benner Jr, Robert E. Vest, Steven E. Grantham, Shannon B. Hill, Thomas B. Lucatorto, Jay H. Hendricks, Patrick J. Abbott, Greg Denbeaux, Alin Antohe, Chimaobi Mbanaso, Kevin Orbek
The photon-stimulated emission of organic molecules from the photoresist during exposure is a serious problem for extreme- ultraviolet lithography (EUVL) because the adsorption of the outgassing products on the EUV optics can lead to carbonization and

Multilayers for Next Generation X-Ray Sources

December 1, 2007
Author(s)
Sasa Bajt, H N. Chapman, E Spiller, S Hau-Riege, J Alameda, A J. Nelson, C C. Walton, B Kjornrattanawanich, Andrew Aquila, Charles Tarrio, Steven Grantham
Multilayers are artificially layered structures that can be used to create optics and optical elements for a broad range of x-ray wavelengths, or can be optimized for other applications. The development of next generation x-ray sources (synchrotrons and x

Effect of Xenon Bombardment on Ruthenium-Coated Grazing Incidence Collector Mirror Lifetime for EUV Lithography

September 1, 2006
Author(s)
M Nieto, J P. Allain, V Titov, M R. Hendricks, A Hassanein, D Rokusek, C Chrobak, Charles Tarrio, Yaniv Barad, Steven Grantham, Thomas B. Lucatorto, Bryan Rice
The effect of energetic Xenon ion bombardment on the extreme ultraviolet (EUV) reflectivity performance of mirrors is of vital importance for the performance of discharge- and laser-produced plasma extreme ultraviolet lithography (EUVL) sources. To study

Optics for Extreme Ultraviolet Lithography

November 1, 2005
Author(s)
Steven E. Grantham, Charles S. Tarrio, Shannon B. Hill, Thomas B. Lucatorto
Extreme Ultraviolet Lithography (EUVL) is considered by many to be the next generation lithography that will fabricate integrated circuits in the next decade. Although EUVL is conceptually similar to optical or deep-UV lithography, it represents a major

A Simple Transfer-Optics System for an Extreme-Ultraviolet Synchrotron Beamline

April 1, 2005
Author(s)
Charles S. Tarrio, Steven E. Grantham, Robert E. Vest, K Liu
Beamlines at synchrotron radiation facilities often have interchangeable endstations to allow several different experiments to use the output of a single monochromator. However, for endstations that are sufficiently large, this is not possible. We have

Improved Radiometry For Extreme-Ultraviolet Lithography

November 1, 2004
Author(s)
Charles S. Tarrio, Robert E. Vest, Steven E. Grantham, K Liu, Thomas B. Lucatorto, Ping-Shine Shaw
The absolute cryogenic radiometer (ACR), an electrical-substitution-based detector, is the most accurate method for measurement of radiant power in the extreme ultraviolet. At the National Institute of Standards and Technology, ACR-based measurements are

Imaging Material Components of an Integrated Circuit Interconnect

January 1, 2004
Author(s)
Zachary H. Levine, Steven E. Grantham, D J. Paterson, I McNulty, I C. Noyan, T M. Levin
Two regions of interest on a copper/tungsten integrated circuit interconnect were imaged using two techniques: (a) the absorption spectrum was measured at 15 x-ray energies between 1687 eV and 1897 eV; and (b) the x-ray fluorescence spectrum was recorded

Facility for Pulsed Extreme Ultraviolet Detector Calibration

October 8, 2003
Author(s)
Steven E. Grantham, Robert E. Vest, Charles S. Tarrio, Thomas B. Lucatorto
All of the Extreme Ultraviolet light sources currently under consideration for Extreme Ultraviolet lithography are based on plasmas that emit radiation with a wavelength of approximately 13.4 nm. These sources whether they are produced by a discharge or

Design and Performance of Capping Layers for Extreme-Ulatraviolet Multilayer Mirrors

October 1, 2003
Author(s)
Sasa Bajt, H N. Chapman, Nhan Nguyen, J Alameda, J C. Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles Tarrio, Steven Grantham
Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity above

40 Years of Metrology With Synchrotron Radiation at SURF

September 1, 2003
Author(s)
Uwe Arp, Steven E. Grantham, Simon G. Kaplan, Ping-Shine Shaw, Charles S. Tarrio, Robert E. Vest
the advantages of a compact synchrotron radiation source like the Synchrotron Ultraviolet Radiation Facility for metrology in the ultraviolet and extreme ultraviolet are shown. The capabilities of the different experimental stations are explained and

Response of a Silicon Photodiode to Pulsed Radiation

September 1, 2003
Author(s)
Robert E. Vest, Steven E. Grantham
Both the integrated-charge and peak-voltage responsivity of a 1 cm2 Si photodiode optimized for the extreme ultraviolet have been measured with 532 nm wavelength pulsed radiation. The peak power of the optical pulse is varied from 35 mW to 24 kW with a

Design and Performance of Capping Layers for EUV Multilayer Mirrors

June 1, 2003
Author(s)
Sasa Bajt, H N. Chapman, Nhan Nguyen, J Alameda, J C. Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles Tarrio, Steven Grantham
The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in