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Search Publications by: Steven Grantham (Fed)

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Displaying 26 - 50 of 132

Design, Developments, and Results from the NIST Additive Manufacturing Metrology Testbed (AMMT)

August 10, 2016
Author(s)
Brandon M. Lane, Sergey Mekhontsev, Steven E. Grantham, Mihaela Vlasea, Justin G. Whiting, Ho Yeung, Jason C. Fox, Clarence J. Zarobila, Jorge E. Neira, Michael L. McGlauflin, Leonard M. Hanssen, Shawn P. Moylan, M A. Donmez, Joseph P. Rice
NIST is developing a facility titled the Additive Manufacturing Metrology Testbed that will enable advanced research into monitoring, controls, process development, and temperature measurement for laser powder bed fusion additive manufacturing and similar

Optical design and initial Results from NISTs AMMT/TEMPS Facility

May 9, 2016
Author(s)
Steven E. Grantham, Brandon M. Lane, Jorge E. Neira, Sergey Mekhontsev, Leonard M. Hanssen, Mihaela Vlasea
NIST’s Physical Measurement and Engineering Laboratories are jointly developing the Additive Manufacturing Measurement Testbed (AMMT)/ Temperature and Emittance of Melts, Powders and Solids (TEMPS) facilities. These facilities will be co-located on an open

Development and evaluation of interface-stabilized and reactive-sputtered oxide-capped multilayers for EUV lithography

March 16, 2015
Author(s)
Michael Kriese, Jim Rodriguez, Gary Fournier, Steven Grantham, Shannon B. Hill, John J. Curry, Charles Tarrio, Yuriy Platonov
A critical component of high-performance EUV lithography source optics is the reflecting multilayer coating. The ideal multilayer will have both high reflectance and high stability to thermal load. Additionally the capping layers must provide resistance to

Development of an EUVL collector with infrared radiation suppression

August 1, 2014
Author(s)
Steven E. Grantham, Mike Kriese, Yuriy Platonov, Bodo Ehlers, Licai Jiang, Jim Rodriguez, Mueller Ulrich, Shayna khatri, Adam Magruder, Charles S. Tarrio
Laser-produced plasma (LPP) sources for extreme ultraviolet lithography (EUVL) systems utilize CO2 lasers operating with wavelength 10.6μm. Since multilayer-coated optics have high reflectivity for this infrared radiation (IR), a significant and

Improved measurement capabilities at the NIST EUV Reflectometry Facility

August 1, 2014
Author(s)
Charles S. Tarrio, Steven E. Grantham, Thomas A. Germer, Jack C. Rife, Thomas B. Lucatorto, Mike Kriese, Yuriy Platonov, Licai Jiang, Jim Rodriguez
The NIST Extreme Ultraviolet (EUV) Reflectometry Facility was designed in the 1990s to accommodate the largest multilayer optics envisioned at that time. However, with increasing power requirements for an EUV scanner, source collection optics have grown

A synchrotron beamline for extreme-ultraviolet photoresist testing

September 30, 2011
Author(s)
Charles S. Tarrio, Steven E. Grantham, Shannon B. Hill, Nadir S. Faradzhev, Lee J. Richter, Chester Knurek, Thomas B. Lucatorto
Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be evaluated for sensitivity and tested to ensure that they will not contaminate the scanner optics. The new NIST facility described here provides data on the contamination

SURF III: A flexible Synchrotron Radiation Source for Radiometry and Research

September 1, 2011
Author(s)
Uwe Arp, Charles W. Clark, Lu Deng, Nadir S. Faradzhev, Alex P. Farrell, Mitchell L. Furst, Steven E. Grantham, Edward W. Hagley, Shannon B. Hill, Thomas B. Lucatorto, Ping-Shine Shaw, Charles S. Tarrio, Robert E. Vest
The calculability of synchrotron radiation (SR) makes electron storage rings wonderful light sources for radiometry. The broadband nature of SR allows coverage of the whole spectral region from the x-ray to the far-infrared. Compact low-energy storage

The NIST EUV facility for advanced photoresist qualification using the witness-sample test

August 29, 2011
Author(s)
Steven E. Grantham, Charles S. Tarrio, Shannon B. Hill, Lee J. Richter, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute of

Optics contamination studies in support of high-throughput EUV lithography tools

March 25, 2011
Author(s)
Shannon B. Hill, Fardina Asikin, Lee J. Richter, Steven E. Grantham, Charles S. Tarrio, Thomas B. Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of

A Novel Wafer-plane Dosimeter for EUV Lithography

November 1, 2009
Author(s)
Steven E. Grantham, Charles S. Tarrio
Extreme Ultraviolet Lithography (EUVL) incorporates 13.5 nm light for patterning wafers and requires in-situ wafer-plane dosimetry that can be tailored to the requirements of an EUVL stepper’s environment. There are several types of detectors that are

At-Wavelength Metrology for EUV Lithography at NIST

July 14, 2009
Author(s)
Charles S. Tarrio, Steven E. Grantham, Robert E. Vest, Thomas B. Lucatorto
The National Institute of Standards and Technology (NIST) is active in many areas of metrology impacting extreme ultraviolet lithography. We will describe our activities in the areas of reflectometry, pulsed radiometry, and long-term multiplayer mirror