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Search Publications by: Steven Grantham (Fed)

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Displaying 51 - 69 of 69

Imaging Material Components of an Integrated Circuit Interconnect

January 1, 2004
Author(s)
Zachary H. Levine, Steven E. Grantham, D J. Paterson, I McNulty, I C. Noyan, T M. Levin
Two regions of interest on a copper/tungsten integrated circuit interconnect were imaged using two techniques: (a) the absorption spectrum was measured at 15 x-ray energies between 1687 eV and 1897 eV; and (b) the x-ray fluorescence spectrum was recorded

Facility for Pulsed Extreme Ultraviolet Detector Calibration

October 8, 2003
Author(s)
Steven E. Grantham, Robert E. Vest, Charles S. Tarrio, Thomas B. Lucatorto
All of the Extreme Ultraviolet light sources currently under consideration for Extreme Ultraviolet lithography are based on plasmas that emit radiation with a wavelength of approximately 13.4 nm. These sources whether they are produced by a discharge or

Design and Performance of Capping Layers for Extreme-Ulatraviolet Multilayer Mirrors

October 1, 2003
Author(s)
Sasa Bajt, H N. Chapman, Nhan Nguyen, J Alameda, J C. Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles Tarrio, Steven Grantham
Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity above

40 Years of Metrology With Synchrotron Radiation at SURF

September 1, 2003
Author(s)
Uwe Arp, Steven E. Grantham, Simon G. Kaplan, Ping-Shine Shaw, Charles S. Tarrio, Robert E. Vest
the advantages of a compact synchrotron radiation source like the Synchrotron Ultraviolet Radiation Facility for metrology in the ultraviolet and extreme ultraviolet are shown. The capabilities of the different experimental stations are explained and

Response of a Silicon Photodiode to Pulsed Radiation

September 1, 2003
Author(s)
Robert E. Vest, Steven E. Grantham
Both the integrated-charge and peak-voltage responsivity of a 1 cm2 Si photodiode optimized for the extreme ultraviolet have been measured with 532 nm wavelength pulsed radiation. The peak power of the optical pulse is varied from 35 mW to 24 kW with a

Design and Performance of Capping Layers for EUV Multilayer Mirrors

June 1, 2003
Author(s)
Sasa Bajt, H N. Chapman, Nhan Nguyen, J Alameda, J C. Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles Tarrio, Steven Grantham
The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in
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