February 1, 2003
Author(s)
Zachary H. Levine, J J. Gao, S Neogi, T M. Levin, J H. Scott, Steven E. Grantham
At 300 ke V scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%