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Imaging Material Components of an Integrated Circuit Interconnect



Zachary H. Levine, Steven E. Grantham, D J. Paterson, I McNulty, I C. Noyan, T M. Levin


Two regions of interest on a copper/tungsten integrated circuit interconnect were imaged using two techniques: (a) the absorption spectrum was measured at 15 x-ray energies between 1687 eV and 1897 eV; and (b) the x-ray fluorescence spectrum was recorded with incident photon energies of 1822 eV, 1797 eV, and 1722 eV. The energies were chosen to optionally excite tungsten and tantalum above their M5 edges yet stay below the silicon K edge. Four materials in the circuits, tantalum, tungsten, silica, and copper were mapped using both techniques. The two sets of images agree in their main features, but differ for finer features.
Journal of Applied Physics
No. 1


integrated circuit interconnect, x-ray fluorescence, x-ray microfluorescence, x-ray microspectroscopy, x-ray spectroscopy


Levine, Z. , Grantham, S. , Paterson, D. , McNulty, I. , Noyan, I. and Levin, T. (2004), Imaging Material Components of an Integrated Circuit Interconnect, Journal of Applied Physics (Accessed May 27, 2024)


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Created January 1, 2004, Updated February 17, 2017