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Imaging Material Components of an Integrated Circuit Interconnect

Published

Author(s)

Zachary H. Levine, Steven E. Grantham, D J. Paterson, I McNulty, I C. Noyan, T M. Levin

Abstract

Two regions of interest on a copper/tungsten integrated circuit interconnect were imaged using two techniques: (a) the absorption spectrum was measured at 15 x-ray energies between 1687 eV and 1897 eV; and (b) the x-ray fluorescence spectrum was recorded with incident photon energies of 1822 eV, 1797 eV, and 1722 eV. The energies were chosen to optionally excite tungsten and tantalum above their M5 edges yet stay below the silicon K edge. Four materials in the circuits, tantalum, tungsten, silica, and copper were mapped using both techniques. The two sets of images agree in their main features, but differ for finer features.
Citation
Journal of Applied Physics
Volume
95
Issue
No. 1

Keywords

integrated circuit interconnect, x-ray fluorescence, x-ray microfluorescence, x-ray microspectroscopy, x-ray spectroscopy

Citation

Levine, Z. , Grantham, S. , Paterson, D. , McNulty, I. , Noyan, I. and Levin, T. (2004), Imaging Material Components of an Integrated Circuit Interconnect, Journal of Applied Physics (Accessed May 27, 2024)

Issues

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Created January 1, 2004, Updated February 17, 2017