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Search Publications by: Ronald G. Dixson (Fed)

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Displaying 76 - 100 of 277

Traceable Calibration of a Critical Dimension Atomic Force Microscope

June 6, 2011
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Craig D. McGray, Jon C. Geist
The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. One component of this effort is a custom in-house metrology AFM, called the calibrated AFM (C-AFM). The NIST C-AFM

A Traceable Scatterometry Measurement of a Silicon Line Grating

May 26, 2011
Author(s)
Thomas A. Germer, Heather J. Patrick, Ronald G. Dixson
In this paper, we present a spectroscopic Mueller matrix ellipsometry measurement of a silicon line grating with nominal pitch of 600 nm and line width 100 nm. An uncertainty analysis is performed on the measurement results. The results are compared to

Progress on CD-AFM tip width calibration standards

May 10, 2011
Author(s)
Ronald G. Dixson, Boon Ping Ng, Craig D. McGray, Ndubuisi G. Orji, Jon C. Geist
The National Institute of Standards and Technology (NIST) is developing a new generation of standards for calibration of CD-AFM tip width. These standards, known as single crystal critical dimension reference materials (SCCDRM) have features with near

Nested Uncertainties and Hybrid Metrology to Improve Measurement Accuracy

April 18, 2011
Author(s)
Richard M. Silver, Nien F. Zhang, Bryan M. Barnes, Hui Zhou, Jing Qin, Ronald G. Dixson
In this paper we present a method to combine measurement techniques that reduce uncertainties and improve measurement throughput. The approach has immediate utility when performing model-based optical critical dimension measurements. When modeling optical

TSOM Method for Semiconductor Metrology

April 18, 2011
Author(s)
Ravikiran Attota, Ronald G. Dixson, John A. Kramar, James E. Potzick, Andras Vladar, Benjamin D. Bunday, Erik Novak, Andrew C. Rudack
Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement resolution using conventional optical microscopes; measurement sensitivities are comparable to what is typical using Scatterometry, SEM and

Measurement Traceability and Quality Assurance in a Nanomanufacturing Environment

March 8, 2011
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Aaron Cordes, Benjamin Bunday, John Allgair
A key requirement for nano-manufacturing is maintaining acceptable traceability of measurements performed to determine size. Given that properties and functionality at the nanoscale are governed by absolute size, maintaining the traceability of dimensional

Scanning Probe Microscope Dimensional Metrology at NIST

December 21, 2010
Author(s)
John A. Kramar, Ronald G. Dixson, Ndubuisi G. Orji
Scanning probe microscopy (SPM) dimensional metrology efforts at the U.S. National Institute of Standards and Technology are reviewed. The main SPM instruments for realizing the International System of Units (SI) are the Molecular Measuring Machine, the

Generalized ellipsometry of artificially designed line width roughness

December 10, 2010
Author(s)
Martin Foldyna, Thomas A. Germer, Brent Bergner, Ronald G. Dixson
We use azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line width roughness (LWR). We model the artificially perturbed grating using 1D and 2D rigorous

Nano- and Atom-scale Length Metrology

October 1, 2010
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Richard A. Allen, Michael W. Cresswell, Vincent A. Hackley
Measurements of length at the nano-scale have increasing importance in manufacturing, especially in the electronics and biomedical industries. The properties of linewidth and step height are critical to the function and specification of semiconductor

Interlaboratory Comparison of Traceable Atomic Force Microscope Pitch Measurements

June 14, 2010
Author(s)
Ronald G. Dixson, Donald Chernoff, Shihua Wang, Theodore V. Vorburger, Ndubuisi G. Orji, Siew-Leng Tan, Joseph Fu
The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have undertaken a three-way interlaboratory

Calibration of 1 nm SiC Step Height Standards

March 31, 2010
Author(s)
Theodore V. Vorburger, Albert M. Hilton, Ronald G. Dixson, Ndubuisi G. Orji, J. A. Powell, A. J. Trunek, P. G. Neudeck, P. B. Abel
We aim to develop and calibrate a set of step height standards to meet the range of steps useful for nanotechnology. Of particular interest to this community is the calibration of atomic force microscopes operating at their highest levels of magnification

Proximity-associated errors in contour metrology

March 31, 2010
Author(s)
John S. Villarrubia, Ronald G. Dixson, Andras Vladar
In contour metrology the CD-SEM (critical dimension scanning electron microscope) assigns a continuous boundary to extended features in an image. The boundary is typically assigned as a simple function of the signal intensity, for example by a brightness