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Search Publications by: Ronald G. Dixson (Fed)

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Displaying 101 - 125 of 139

Reference Metrology Using a Next Generation CD-AFM

May 24, 2004
Author(s)
Ronald G. Dixson, Angela Guerry
International SEMATECH (ISMT and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of AFM dimensional metrology in semiconductor manufacturing. Due to the unique metrology requirements and the rapid

Interim Report on Single Crystal Critical Dimension Reference Materials (SCCDRM)

January 1, 2004
Author(s)
Ronald G. Dixson, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Brandon Park, Christine E. Murabito, Joaquin (. Martinez
The single crystal critical dimension reference materials (SCCDRM) project has been completed, and the samples for the SEMATECH member companies have been released for distribution. The final technology transfer report is currently undergoing revision and

Critical Dimension Calibration Standards for ULSI Metrology

September 30, 2003
Author(s)
Richard A. Allen, Michael W. Cresswell, Christine E. Murabito, Ronald G. Dixson, E. Hal Bogardus
NIST and International SEMATECH are developing single-crystal reference materials for use in evaluating and calibrating critical dimension (CD), that is linewidth, metrology tools. Primary calibration of these reference materials uses a high-resolution

Toward Traceability for At-line AFM Dimensional Metrology

July 1, 2003
Author(s)
Marylyn H. Bennett, Angela Guerry, Ronald G. Dixson, Michael T. Postek, Theodore V. Vorburger
The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability - below one nanometer in some cases. Accuracy, however

Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage

May 1, 2003
Author(s)
N. Sullivan, Ronald G. Dixson, B Bunday, M Mastovich, P Knutruda, P Fabre, R Brandoma
Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total critical dimension (CD) uncertainty of up to 10 nm can arise from line slimming through a combination of the line slimming

Implementation of a Reference Measurement System Using CD-AFM

May 1, 2003
Author(s)
Ronald G. Dixson, Theodore V. Vorburger, Angela Guerry, Marylyn H. Bennett, B Bunday
International SEMATECH (ISMT) and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of atomic force microscope (AFM) dimensional metrology in semiconductor manufacturing. The rapid pace of

Characterizing CDSEM Metrology of 193 nm Resists at Ultra Low Voltage

January 1, 2002
Author(s)
N. Sullivan, M Mastovich, Ronald G. Dixson, P Knutruda, B Bunday, P Febrea, R Brandoma
Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total uncertainties, which approach 10 nm, can be realized through the combination of across wafer variation of line slimming

Toward Traceability for At Line AFM Dimensional Metrology

January 1, 2002
Author(s)
Ronald G. Dixson, Angela Guerry, Marylyn H. Bennett, Theodore V. Vorburger, Michael T. Postek
The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability--below 1 nm in some cases. Accuracy, however, is

Manufacturing of Prostheses

September 1, 2001
Author(s)
Matthew A. Davies, Ronald G. Dixson
This paper is a summary of a workshop session during the Workshop on Biomedical Materials and Devices, held June 13 -14, 2001. The workshop is part of a series of workshops and topical meetings organized by NIST in the area of biomedical technology. The

Silicon Single Atom Steps as AFM Height Standards

August 1, 2001
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore V. Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate

Atomic Level Surface Metrology

January 1, 2001
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Jun-Feng Song, Thomas Brian Renegar, Joseph Fu, Ndubuisi George Orji, V W. Tsai, E. C. Williams, H Edwards, D Cook, P West, R Nyffenegger
MotivationSemiconductor wafers and many types of optical elementsrequire ultra-smooth surfaces in order to functionas specifiedExamples:Laser gyro mirrors with rms roughness 0.1 nmSilicon gate oxides with thickness 3 nm,rms roughness must be significantly

Accurate Dimensional Metrology With Atomic Force Microscopy

June 1, 2000
Author(s)
Ronald G. Dixson, R Koning, Joseph Fu, Theodore V. Vorburger, Thomas B. Renegar
Atomic force microscopes (AFMs) generate three dimensional images with nanometer level resolution and, consequently, are used in the semiconductor industry as tools for sub-micrometer dimensional metrology. Measurements commonly performed with AFMs are

Step Height Metrology for Data Storage Applications

November 1, 1999
Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, Thomas Brian Renegar, Theodore V. Vorburger, V W. Tsai, Michael T. Postek
The measurements of bump heights and pit depth on compact discs (CD) with atomic force microscopes (AFMs) are quite different from the measurement of step heights on step height calibration standards. Both the bumps and the pits show much larger transition

Step-height Metrology for Data Storage Applications

November 1, 1999
Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, Thomas Brian Renegar, Theodore V. Vorburger, V W. Tsai, Michael T. Postek
The measurement of bump heights and pit depth on compact discs (CD) with atomic force microscopes (AFMs) is quite different from the measurement of step heights on step height calibration standards. Both the bumps and the pits show much larger transition

Dimensional Metrology with the NIST Calibrated Atomic Force Microscope

June 1, 1999
Author(s)
Ronald G. Dixson, R Koning, V W. Tsai, Joseph Fu, Theodore V. Vorburger
Atomic force microscopes (AFMs) are increasingly used in the semiconductor industry as tools for submicrometer dimensional metrology. The scales of an AFM must be calibrated in order to perform accurate measurements. We have designed and developed the

Intercomparison of SEM, AFM, and Electrical Linewidths

June 1, 1999
Author(s)
John S. Villarrubia, Ronald G. Dixson, Samuel N. Jones, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell
Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques like scanning electron microscopy (SEM) and atomic force microscopy (AFM), the image of the sharp

Algorithms for Calculating Single-Atom Step Heights

January 1, 1999
Author(s)
Joseph Fu, V W. Tsai, R Koning, Ronald G. Dixson, Theodore V. Vorburger
Recently, measuring Si(111) single atomic steps prompted us to investigate the measuring technique. The section technique is the most popular method for measuring the height. By measuring a simulated Si(111) atomic step, we have found it could have an

Measurement of Pitch and Width Samples with the NIST Calibrated Atomic Force Microscope

June 1, 1998
Author(s)
Ronald G. Dixson, R Koning, Theodore V. Vorburger, Joseph Fu, V W. Tsai
Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales

Improving Step Height and Pitch Measurements Using the Calibrated Atomic Force Microscope

January 1, 1998
Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, V W. Tsai, Theodore V. Vorburger
The most important industrial application of Atomic Force Microscopy (AFM) is probably the accurate measurement of geometrical dimensions of small surface structures. In order to maintain the instrument''s performance and to achieve the high accuracy often