U.S. flag

An official website of the United States government

Search Publications by: Ronald G. Dixson (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 277

Distributed Force Probe Bending Model of CD-AFM Bias

April 1, 2013
Author(s)
Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Richard M. Silver
Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and significant

3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization

March 25, 2013
Author(s)
Jing Qin, Hui Zhou, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver
Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield microscopy

Effect of the Spherical Indenter Tip Assumption on the Initial Plastic Yield Stress

October 17, 2012
Author(s)
Li Ma, Lyle E. Levine, Ronald G. Dixson, Douglas T. Smith, David Bahr
Nanoindentation is widely used to explore the mechanical properties of small volumes of materials. For crystalline materials, there is a growing experimental and theoretical interest in pop-in events, which are sudden displacement-burst excursions during

Robust Auto-Alignment Technique for Orientation-Dependent Etching of Nanostructures

May 29, 2012
Author(s)
Craig D. McGray, Richard J. Kasica, Ndubuisi G. Orji, Ronald G. Dixson, Michael W. Cresswell, Richard A. Allen, Jon C. Geist
A robust technique is presented for auto-aligning nanostructures to slow-etching crystallographic planes in materials with diamond cubic structure. Lithographic mask patterns are modified from the intended dimensions of the nanostructures to compensate for

Contour Metrology using Critical Dimension Atomic Force Microscopy

April 9, 2012
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Andras Vladar, Bin Ming, Michael T. Postek
The critical dimension atomic force microscope (CD-AFM), which is used as a reference instrument in lithography metrology, has been proposed as a supplemental instrument for contour measurement and verification. However, although data from CD-AFM is

On CD-AFM bias related to probe bending

April 9, 2012
Author(s)
Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Richard M. Silver
Critical Dimension AFM (CD-AFM) is a widely used reference metrology. To characterize modern semiconductor devices, very small and flexible probes, often 15 nm to 20 nm in diameter, are now frequently used. Several recent publications have reported on

Traceable Calibration of a Critical Dimension Atomic Force Microscope

March 9, 2012
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Craig D. McGray, John E. Bonevich, Jon C. Geist
The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. One component of this program, and the focus of this paper, is the use of critical dimension atomic force

A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy

July 31, 2011
Author(s)
Richard M. Silver, Nien F. Zhang, Bryan M. Barnes, Jing Qin, Hui Zhou, Ronald G. Dixson
We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different