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Search Publications by: Theodore V. Vorburger (Assoc)

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Displaying 176 - 200 of 417

Manufacturing and Quality Control of the NIST Reference Material 8240 Standard Bullet

October 26, 2003
Author(s)
Eric P. Whitenton, Clarence Johnson, David R. Kelley, Robert A. Clary, Brian S. Dutterer, Li Ma, Jun-Feng Song, Theodore V. Vorburger
The National Integrated Ballistics Information Network (NIBIN) is currently under development by the Bureau of Alcohol, Tobacco and Firearms (ATF) and the Federal Bureau of Investigation (FBI). In support of this effort, the National Institute of Standards

Space-Scale Analysis of Line Edge Roughness on 193 nm Lithography Test Structures

October 1, 2003
Author(s)
Ndubuisi G. Orji, Jayaraman Raja, Theodore V. Vorburger, Xiaohong Gu
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology

Influence of analysis Algorithms on the Value of Distorted Step Height Data

September 1, 2003
Author(s)
Ndubuisi G. Orji, Jayaraman Raja, Son H. Bui, Theodore V. Vorburger
One of the most important aspects of step height evaluation are the analysis algorithms used. There algorithms assume that the profiles and images being analyzed are ideal, but real step profiles are not ideal and the analysis algorithms can influence the

Toward Traceability for At-line AFM Dimensional Metrology

July 1, 2003
Author(s)
Marylyn H. Bennett, Angela Guerry, Ronald G. Dixson, Michael T. Postek, Theodore V. Vorburger
The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability - below one nanometer in some cases. Accuracy, however

Sub-Nanometer Wavelength Metrology of Lithographically Prepared Structures: A Comparison of Neutron and X-Ray Scattering

June 1, 2003
Author(s)
Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, Ndubuisi George Orji, Theodore V. Vorburger, P J. Bolton, Z Barclay
The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We provide

Implementation of a Reference Measurement System Using CD-AFM

May 1, 2003
Author(s)
Ronald G. Dixson, Theodore V. Vorburger, Angela Guerry, Marylyn H. Bennett, B Bunday
International SEMATECH (ISMT) and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of atomic force microscope (AFM) dimensional metrology in semiconductor manufacturing. The rapid pace of

A Model for Step Height, Edge Slope and Linewidth Measurements Using AFM

January 1, 2003
Author(s)
Xuezeng Zhao, Theodore V. Vorburger, Joseph Fu, Jun-Feng Song, C Nguyen
Nano-scale linewidth measurements are performed in semiconductor manufacturing and in the data storage industry and will become increasingly important in micro-mechanical engineering. With the development of manufacturing technology in recent years, the

Bullet Signature Measurements at NIST

January 1, 2003
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
The RM (Reference Material) 8240 standard bullets are currently under development at the National Institute of Standards and Technology 9NIST) to support the coming National Integrated Ballistics Information Network (NIBIN). A bullet signature measurement

NIST Reference Material (RM) 8240/2350 Project-Standard Bullets and Casings

January 1, 2003
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Robert A. Clary, Li Ma, M Ols, Eric P. Whitenton
Standard bullets and casings are currently under development to support the National Integrated Ballistics Information System (NIBIN) in the U.S. Based on a numerically controlled diamond turning technique, 20 RM 8240 standard bullets were fabricated in

Scale-Space Analysis of Line Edge Roughness on 193 nm Lithography Test Structures

January 1, 2003
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Xiaohong Gu, Jayaraman Raja
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology

Surface Finish and Sub-Surface Metrology

January 1, 2003
Author(s)
Theodore V. Vorburger, Ndubuisi George Orji, Li Piin Sung, T Rodriguez
Surface finsih affects the performance of a wide variety of manufactured products ranging from road surfaces and ships to mechanical parts, microelectronics, and optics. Accordingly roughness values can vary over many orders of magnitude. A variety of

Surface Metrology Software Variability in Two-Dimensional Measurements

January 1, 2003
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Xiaohong Gu, Jayaraman Raja
A range of surface texture measurement instruments is available in the market place. Most of the measurement instruments are microcomputer-based systems that contain their own surface analysis software to evaluate measured roughness profiles. After a
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