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Search Publications by: Joseph J. Kopanski (Assoc)

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Displaying 26 - 50 of 256

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits

October 11, 2015
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski
The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based

Nanoelectronic Structural Information with Scanning Probe Microscopes

June 14, 2015
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscope (SPM) based methods to obtain subsurface structural information about nano-structured materials are described. A test structure chip containing structures to produce various surface electric field gradients, spatially varying

Electromagnetic Field Test Structure Chip for Back End of the Line Metrology

March 23, 2015
Author(s)
Lin You, Jungjoon Ahn, Emily Hitz, Jonathon Michelson, Yaw S. Obeng, Joseph J. Kopanski
A test chip to produce known and controllable gradients of surface potential and magnetic field at the chip surface and suitable for imaging with various types of scanning probe microscopes is presented. The purpose of the test chip is to evaluate various

Influence of Metal?MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts

December 16, 2014
Author(s)
Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David J. Gundlach, Curt A. Richter, D. E. Ioannou, Qiliang Li
In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the

Broad-Band Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

November 7, 2014
Author(s)
Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Rhonda R. Franklin
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non- destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal

Scanning Probe Microscopes for Subsurface Imaging

May 11, 2014
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Emily Hitz, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some ability to image sub-surface structures. This paper describes the theoretical and practical basis for imaging metal lines buried beneath insulating layers and for imaging insulating regions or voids within metal

Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes

March 25, 2013
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A. Richter
The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been applied to