Kopanski, J.
and Walker, T.
(2008),
Scanning Probe Microscopy for Dielectric and Metal Characterization, Electrochemical Society Transactions, Dielectrics for Nanosystems III, Phoenix, AZ
(Accessed December 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Scanning Probe Microscopy for Dielectric and Metal Characterization
Published
Author(s)
, Thomas R. Walker
Abstract
The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for characterizing the dielectric constant of insulators. Scanning Kelvin force microscopy (SKFM) can image potential distributions and work functions within conductors. Both techniques depend on the capacitance between the tip and sample, which has an inverse square dependence on tip-sample separation, limiting spatial resolution. A differential data acquisition technique to improve spatial resolution is described.Proceedings Title
Electrochemical Society Transactions, Dielectrics for Nanosystems III
Volume
13
Issue
2
Conference Dates
May 18-22, 2008
Conference Location
Phoenix, AZ
Conference Title
213th Meeting of the Electrochemical Society
Pub Type
Conferences
Keywords
dielectric constant, IC-SCM, intermittent contact scanning capacitance microscopy, scanning Kelvin force microscopy, SKFM
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created June 10, 2008, Updated February 19, 2017