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Conductive Carbon Nanotubes for Semiconductor Metrology

Published

Author(s)

Joseph J. Kopanski, Victor H. Vartanian, Vladimir Mancevski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin

Abstract

This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication were determined as a function of tip geometry using tunneling AFM (TUNA). Conductive CNT tips were used to measure 2D dopant concentration as a function of annealing conditions in BF2-implanted samples.
Proceedings Title
Instrumentation, Metrology, and Standards for Nanomanufacturing IV, Proceedings of SPIE Volume: 7767
Volume
7767
Conference Dates
August 1-6, 2010
Conference Location
San Diego, CA
Conference Title
SPIE NanoScience + Engineering

Keywords

Carbon Nanotube, Dopant profiling, Scanning Capacitance Microscope

Citation

Kopanski, J. , Vartanian, V. , Mancevski, V. , Rack, P. , , I. and Bresin, M. (2010), Conductive Carbon Nanotubes for Semiconductor Metrology, Instrumentation, Metrology, and Standards for Nanomanufacturing IV, Proceedings of SPIE Volume: 7767, San Diego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906923 (Accessed April 16, 2024)
Created August 10, 2010, Updated February 19, 2017