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Displaying 2226 - 2250 of 2724

Dimensional Metrology of Millimeter- and Sub-millimeter-scale Components

October 1, 2000
Author(s)
Theodore V. Vorburger, Jun-Feng Song, Joseph Fu, M Tundermann, Thomas Brian Renegar, Theodore D. Doiron, N G. Orji
Decreasing sizes and tolerances of engineering components bring a demand for decreasing uncertainty in the dimensional measurements of these parts. Hence there is increasing need for measuring machines capable of performing dimensional and geometrical

Form Error and Hardness Performance of Rockwell Diamond Indenters

September 1, 2000
Author(s)
Jun-Feng Song, Samuel R. Low III, Li Ma
The influences of form errors on hardness performance of Rockwell diamond indenter are discussed. Experimental results are introduced. The Finite Element Analysis (FEA) method is used to simulate the hardness measurement process. The effect of tip radii

Broadband Ac-dc Difference Calibrations of Current Shunts up to 100 A at NIST

July 1, 2000
Author(s)
Joseph R. Kinard Jr., Thomas E. Lipe Jr., Clifton B. Childers, Owen B. Laug, Jon R. Pratt
NIST is now offering broadband, ac-dc difference calibrations of current shunts from 3 A to 100 A, and at frequencies up to 30 kHz, as special tests. We present an overview of this new service including the design and construction of the NIST standard

Capability in Rockwell C Scale Hardness

July 1, 2000
Author(s)
Walter S. Liggett Jr, Samuel Low, David J. Pitchure, Jun-Feng Song
A measurement system is capable if it produces measurements with uncertainties small enough for demonstration of compliance with product specifications. To establish the capability of a system for Rockwell C scale hardness, one must assess measurement

Evaluation of Standards for a 10 V MAP Service at NIST

July 1, 2000
Author(s)
Yi-hua D. Tang, June E. Sims
A Measurement Assurance Program (MAP) provides a method of assessing and maintaining the quality of a measurement process. Such a program has two parts: the operation of a set of statistical tools to ensure the predictable behavior of the standards and

Low-Frequency Impedance Calibrations at NIST

July 1, 2000
Author(s)
Andrew D. Koffman, Yui-May Chang
This paper presents an overview of the low-frequency impedance measurement services offered through the Impedance Calibration Laboratory (ICL) at the National Institute of Standards and Technology (NIST). Emphasis will be given to recent improvements as

Proposed Bullet Signature Comparisons Using Autocorrelation Functions

July 1, 2000
Author(s)
Jun-Feng Song, Theodore V. Vorburger
The National Institute of Standards and Technology (NIST) standard bullets and casings are intended as reference standards for crime laboratories to help verify that the computerized optical-imaging equipment in those laboratories is operating properly

Accurate Dimensional Metrology With Atomic Force Microscopy

June 1, 2000
Author(s)
Ronald G. Dixson, R Koning, Joseph Fu, Theodore V. Vorburger, Thomas B. Renegar
Atomic force microscopes (AFMs) generate three dimensional images with nanometer level resolution and, consequently, are used in the semiconductor industry as tools for sub-micrometer dimensional metrology. Measurements commonly performed with AFMs are

Is a Production Level Scanning Electron Microscope Linewidth Standard Possible?

June 1, 2000
Author(s)
Michael T. Postek, Andras Vladar, John S. Villarrubia
Metrology will remain a pricipal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 nm and 100 nm linewidths and high aspect ratio structures, the scanning electron microscope (SEM) remains

Is a Production-Level Scanning Electron Microscope Linewidth Standard Possible?

June 1, 2000
Author(s)
Michael T. Postek, Andras Vladar, John S. Villarrubia
Metrology will remain a principal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 and l00-nanometer linewidths and high aspect ratio structures, the scanning electron microscope (SEM)

Linewidth Measurement Intercomparison on a BESOI Sample

June 1, 2000
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell, Rathindra Ghoshtagore
The effect of the instrument on the measurement must be known in order to generate an accurate linewidth measurement. Although instrument models exist for a variety of techniques, how does one assess the accuracy of these models? Intercomparisons between

The Neolithography Consortium

June 1, 2000
Author(s)
James E. Potzick
The role of process simulation in microlithography is becoming an increasingly important part of process control as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear. An

Molecular Measuring Machine Design and Measurements

May 1, 2000
Author(s)
John A. Kramar, Jay S. Jun, William B. Penzes, Fredric Scire, E C. Teague, John S. Villarrubia
We at the National Institute of Standards and Technology are building a metrology instrument called the Molecular Measuring Machine (M3) with the goal of performing nanometer-accuracy, two-dimensional, point-to-point measurements over a 50 mm by 50 mm area

Recent Developments in BIPM Voltage Standard Comparisons

May 1, 2000
Author(s)
D. Reymann, Thomas J. Witt, P. Vrabcek, Yi-hua D. Tang, Clark A. Hamilton, A. S. Katkov, Blaise Jeanneret, O. Power
The BIPM carries out a number of comparisons of DC voltage standards with National Metrology Institutes. These take the form of on-site comparisons of Josephson standards or bilateral comparisons using traveling standards based on Zener diodes. This paper
Displaying 2226 - 2250 of 2724
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