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Lateral SiOx Tunnel Barrier Formation for Si-Based Tunnel Transistor Using Scanned Probe Oxidation



K Morimoto, K Morita, K Ohnaka, John A. Dagata


Tunneling transistors designed with a lateral tunnel barrier between source and drain electrodes have attracted much attention recently as an approach to silicon-compatible nanoelectronics (1). In order to realize this device, the lateral tunneling barrier must be fabricated with a width of less than 10 nm. Fabrication methods of a lateral tunnel junction using scanned probe microscope (SPM) oxidation were described previously, but, so far, research efforts have focused on forming a metal/insulator junction as with the nb/nbOx system[2]. In this work, we demonstrate preliminary results towards fabricating and evaluating a lateral Si/SiOx tunneling junction on an ultra-thin Si layer by SPM oxidation.
Proceedings Title
Fourth International Workshop on Quantum Funtional Devices
Conference Dates
November 15-17, 2000
Conference Location
Kanazawa, 1, JA
Conference Title
MITI R&D Program (Quantum Functional Device Project) supported by NEDO


barrier, lateral tunneling, nonelectronics, scanned probe oxidation


Morimoto, K. , Morita, K. , Ohnaka, K. and Dagata, J. (2000), Lateral SiO<sub>x</sub> Tunnel Barrier Formation for Si-Based Tunnel Transistor Using Scanned Probe Oxidation, Fourth International Workshop on Quantum Funtional Devices, Kanazawa, 1, JA (Accessed May 28, 2024)


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Created October 31, 2000, Updated October 12, 2021