Lateral SiOx Tunnel Barrier Formation for Si-Based Tunnel Transistor Using Scanned Probe Oxidation
K Morimoto, K Morita, K Ohnaka, John A. Dagata
Tunneling transistors designed with a lateral tunnel barrier between source and drain electrodes have attracted much attention recently as an approach to silicon-compatible nanoelectronics (1). In order to realize this device, the lateral tunneling barrier must be fabricated with a width of less than 10 nm. Fabrication methods of a lateral tunnel junction using scanned probe microscope (SPM) oxidation were described previously, but, so far, research efforts have focused on forming a metal/insulator junction as with the nb/nbOx system. In this work, we demonstrate preliminary results towards fabricating and evaluating a lateral Si/SiOx tunneling junction on an ultra-thin Si layer by SPM oxidation.
Fourth International Workshop on Quantum Funtional Devices
November 15-17, 2000
Kanazawa, 1, JA
MITI R&D Program (Quantum Functional Device Project) supported by NEDO
, Morita, K.
, Ohnaka, K.
and Dagata, J.
Lateral SiO<sub>x</sub> Tunnel Barrier Formation for Si-Based Tunnel Transistor Using Scanned Probe Oxidation, Fourth International Workshop on Quantum Funtional Devices, Kanazawa, 1, JA
(Accessed December 4, 2023)