Lateral SiOx Tunnel Barrier Formation for Si-based Tunnel Transistor Using Scanned Probe Oxidation

Published

November 1, 2000

Author(s)

K Morimoto, L Morita, K Ohnaka, John A. Dagata

Abstract

Tunneling transistors designed with a lateral tunnel barrier between source and drain electrodes have attracted much attention recently as an approach to silicon-compatible nanoelectronics. In order to realize this device, the lateral tunneling barrier must be fabricated with a width of less than 10-nm. Fabrication methods of a lateral tunnel junction using scanned probe microscope (SPM) oxidation were described previously, but, so far, research efforts have focused on forming a metal/insulator junction as with the Nb/NBOx system. In this work, we demonstrate preliminary results towards fabricating and evaluating a lateral Si/SiOx tunneling junction on an ultra-thin Si layer by SPM oxidation.

Proceedings Title

MITI R&D Program (Quantum Functional Device Project) supported by NEDO

Conference Dates

November 15-17, 2000

Conference Location

Kanazawa, 1, JA

Pub Type

Conferences

Keywords

lateral tunneling barrier, nanoelectronics, scanned probe oxidation

Citation

Morimoto, K. , Morita, L. , Ohnaka, K. and Dagata, J. (2000), Lateral SiOx Tunnel Barrier Formation for Si-based Tunnel Transistor Using Scanned Probe Oxidation, MITI R&D Program (Quantum Functional Device Project) supported by NEDO, Kanazawa, 1, JA (Accessed January 24, 2025)