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Lateral SiOx Tunnel Barrier Formation for Si-based Tunnel Transistor Using Scanned Probe Oxidation

Published

Author(s)

K Morimoto, L Morita, K Ohnaka, John A. Dagata

Abstract

Tunneling transistors designed with a lateral tunnel barrier between source and drain electrodes have attracted much attention recently as an approach to silicon-compatible nanoelectronics. In order to realize this device, the lateral tunneling barrier must be fabricated with a width of less than 10-nm. Fabrication methods of a lateral tunnel junction using scanned probe microscope (SPM) oxidation were described previously, but, so far, research efforts have focused on forming a metal/insulator junction as with the Nb/NBOx system. In this work, we demonstrate preliminary results towards fabricating and evaluating a lateral Si/SiOx tunneling junction on an ultra-thin Si layer by SPM oxidation.
Proceedings Title
MITI R&D Program (Quantum Functional Device Project) supported by NEDO
Conference Dates
November 15-17, 2000
Conference Location
Kanazawa, 1, JA

Keywords

lateral tunneling barrier, nanoelectronics, scanned probe oxidation

Citation

Morimoto, K. , Morita, L. , Ohnaka, K. and Dagata, J. (2000), Lateral SiOx Tunnel Barrier Formation for Si-based Tunnel Transistor Using Scanned Probe Oxidation, MITI R&D Program (Quantum Functional Device Project) supported by NEDO, Kanazawa, 1, JA (Accessed February 25, 2024)
Created October 31, 2000, Updated October 12, 2021