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Displaying 1476 - 1500 of 2289

Gate Dielectrics Year-In-Review

May 3, 2010
Author(s)
Jason P. Campbell
… Noise, etc ) in a variety of technologically relevant (oxide, oxynitride, and high-k) gate stacks. In addition, this …

High Inversion Current in Silicon Nanowire Field Effect Transistors

November 30, 2004
Author(s)
Sang-Mo Koo, Jin-Ping Han, Eric M. Vogel, Curt A. Richter, J. Vahakangas, Akira Fujiwara
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional 'top-down?approach using electron-beam lithography. The SiNW device shows higher inversion channel current density than the

Near-Field Second Harmonic Microscopy of Thin Ferroelectric Films

October 12, 2021
Author(s)
V Smolyaninova, H Y. Liang, C H. Lee, C C. Davis, L D. Rotter, Debra Kaiser
Near-field second harmonic microscopy is ideally suited for studies of local nonlinearity and poling of ferroelectric materials at the microscopic level. Its main advantages in comparison with other scanning probe techniques are the possibility of fast

Microhotplate Platforms for Chemical Sensor Research

June 1, 2001
Author(s)
Stephen Semancik, Richard E. Cavicchi, M C. Wheeler, J E. Tiffany, G Poirier, R M. Walton, John S. Suehle, B. Panchapakesan, D. E. DeVoe
… experiments, temperature dependence, tin oxide …
Displaying 1476 - 1500 of 2289
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