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Experimental Determination of Electron Effective Attenuation Lengths in Silicon Dioxide Thin Films Using Synchrotron Radiation - I. Data Analysis and Comparisons

Published

Author(s)

M Suzuki, H Ando, Yukihiru Higashi, H Takenaka, H Shimada, N Matsubayashi, M Imamura, S Kurosawa, S Tanuma, Cedric J. Powell

Abstract

We have measured effective attenuation lengths (EALs) of 140 to 1100 eV electrons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously although there was agreement with the values measured by Hochella and Carim. (Surf. Sci. Lett. 1988; 197: L260). Our measured EALs were 37% smaller than the corresponding inelastic mean free paths calculated from optical data by Tanumma et al. Part of this difference is believed to be due to uncertainty in measurements of the oxide thickness and the remainder to the effects of elastic-electron scattering.
Citation
Surface and Interface Analysis
Volume
29
Issue
No. 5

Keywords

effective attenuation length, inelastic mean free path, photoemission, silicon dioxie, synchrotron radiation

Citation

Suzuki, M. , Ando, H. , Higashi, Y. , Takenaka, H. , Shimada, H. , Matsubayashi, N. , Imamura, M. , Kurosawa, S. , Tanuma, S. and Powell, C. (2000), Experimental Determination of Electron Effective Attenuation Lengths in Silicon Dioxide Thin Films Using Synchrotron Radiation - I. Data Analysis and Comparisons, Surface and Interface Analysis (Accessed February 22, 2024)
Created April 30, 2000, Updated October 12, 2021