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Displaying 551 - 575 of 757

On-Wafer Measurements of Noise Temperature

December 1, 1999
Author(s)
James P. Randa, Robert L. Billinger
The NIST Noise Project has developed the theoretical formalism and experimental methods for performing accurate noise-temperature measurements on wafer. This report summarizes the theoretical formulation and describes the design, methods, and results of

IGBT Model Validation for Soft-Switching Applications

November 1, 1999
Author(s)
David W. Berning, Allen R. Hefner Jr.
Techniques are described for validating the performance of Insulated-Gate Bipolar Transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that

Characteristic Impedance of Microstrip on Silicon

October 25, 1999
Author(s)
Dylan F. Williams, Bradley K. Alpert
We compare power-voltage, power-current, and causal definitions of the characteristic impedance of microstrip transmission lines on silicon substrates.

Characteristic impedance of microstrip on silicon

October 25, 1999
Author(s)
Dylan F. Williams, Bradley K. Alpert
In this paper, we compare the power-voltage, power-current, and causal definitions of the characteristic impedance of microstrip transmission lines on silicon substrates.

Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device

October 3, 1999
Author(s)
Jih-Sheng Lai, David W. Berning, Allen R. Hefner Jr., Chien-Chung Shen, B M. Song, R Zhou
A new class of MOS-gated power semiconductor devices Cool MOS has recently been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of the high-voltage power MOSFETs. From the application point of

New Antenna Positioner Improves NIST's Capabilities

October 1, 1999
Author(s)
G. Kangiser, Dennis G. Camell
Antenna and electric field probe calibration requires precise positioning and movement throughout a known RF field Measurements are usually made in an anechoic chamber. A robotic six axis antenna positioner was needed that would work in this environment at

Electron Collision Cross Sections Derived from Critically Assessed Data

July 1, 1999
Author(s)
Loucas G. Christophorou, James K. Olthoff
Electron-molecule collisions are among the most fundamental processes in gas discharges. They are also the precursors of the ions and the radicals which drive the etch, cleaning, or deposition processes in plasma reactors. Hence, there is a need for a

Negative Ion-Neutral Reactions in Townsend Discharges

July 1, 1999
Author(s)
James K. Olthoff, MVVS. Rao
Relative intensities and translational ion-flux energy distributions are presented for negative ions sampled from Townsend discharges in O 2, SF 6, and CF 4 for a high range of density reduced electric fields greater than 2 W 10 -18 V m 2 (> 2 kTd). These

Studies of Ion Bombardment in High Density Plasmas Containing CF 4

July 1, 1999
Author(s)
James K. Olthoff, Yicheng Wang
We report ion energy distributions, relative ion intensities, and absolute total ion current densities at the grounded electrode of an inductively coupled Gaseous Electronics Conference radio-frequency reference cell for discharges generated in pure C 4

Electron Drift and Attachment in CHF 3 and its Mixtures With Argon

May 1, 1999
Author(s)
Yicheng Wang, Loucas G. Christophorou, James K. Olthoff, J. K. Verbrugge
Measurements are reported of the electron drift velocity, w, in CHF 3 gas and in its mixtures with argon. The E/N dependence of w in the mixtures exhibits regions of distinct negative differential conductivity. A small electron attachment rate constant (-

Electron Interactions With Cl 2

April 1, 1999
Author(s)
Loucas G. Christophorou, James K. Olthoff
Low energy electron interactions with the Cl 2 molecule are reviewed. Information is synthesized and assessed on the cross sections for total electron scattering, total rotational excitation, total elastic electron scattering, momentum transfer, total
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