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Nanotechnology

Nanometrology

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Displaying 551 - 575 of 866

Switching Mechanisms in Flexible Solution-Processed TiO2 Memristors

July 11, 2012
Author(s)
Joseph L. Tedesco, Laurie Stephey, Madelaine H. Hernandez, Curt A. Richter, Nadine Gergel-Hackett
Memristors are emerging as unique electrical devices with potential applications in memory, reconfigurable logic, and biologically-inspired computing. Due to the novelty of these devices, the complete details of their switching mechanism are not yet well

A Glowing Future for Lab on a Chip Testing Standards

June 28, 2012
Author(s)
Samuel M. Stavis
Testing standards are more fundamental from a metrological perspective and less controversial from an industrial perspective than product standards, representing a path of less resistance towards the standardization and commercialization of lab on a chip

Electro-Mechanical Properties of Graphene Drumheads

June 22, 2012
Author(s)
Nikolai N. Klimov, Suyong S. Jung, Shuze Zhu, Teng Li, C. Alan Wright, Santiago Solares, David B. Newell, Nikolai B. Zhitenev, Joseph A. Stroscio
The electro-mechanical properties of a suspended graphene layer are determined by scanning tunneling microscopy (STM) and spectroscopy (STS) measurements and computational simulations of the graphene membrane mechanics and morphology. The graphene membrane

Photo-induced Surface Transformation of Silica Nanocomposites

June 22, 2012
Author(s)
Justin M. Gorham, Tinh Nguyen, Coralie Bernard, Deborah S. Jacobs, Richard D. Holbrook
The physicochemical, UV-induced surface modifications to silica nanoparticle (SiNP) - epoxy composites have been investigated. The silica nanocomposites (SiNCs) were prepared using a two-part epoxy system with 10 % mass fraction of SiNPs and exposed to

How nanorough is rough enough?

June 21, 2012
Author(s)
Konrad Rykaczewski, William Osborn, Jeff Chinn, Marlon L. Walker, John Henry Scott, Wanda Jones, Chonglei Hao, Shuhuai Yao, Zuankai Wang
Surfaces which evince superhydrophobic properties during water condensation have a potential to dramatically enhance energy efficiency in power generation and desalination systems. Although various such surfaces have been reported, their development has

Optimal Diffusion Coefficient Estimation in Single-Particle Tracking

June 21, 2012
Author(s)
Xavier Michalet, Andrew J. Berglund
Recent results provide new theoretical concepts and practical algorithms for diffusion coefficient estimation in single-particle tracking. We compare two recent approaches to estimate the diffusion coefficient from a single-particle trajectory in the

Metastable Crystalline AuGe Catalysts Formed During Isothermal Germanium Nanowire Growth

June 19, 2012
Author(s)
Andrew D. Gamalski, Jerry Tersoff, Renu Sharma, Caterina Ducati, Stephan Hofmann
We observe the formation of metastable AuGe phases without quenching, during strictly isothermal nucleation and growth of Ge nanowires, using video-rate lattice-resolved environmental transmission electron microscopy. We explain the unexpected formation of

Three-dimensional real-time tracking of nanoparticles at an oil-water interface

June 5, 2012
Author(s)
Kan K. Du, James A. Liddle, Andrew J. Berglund
We show that real-time feedback control can be used to study three-dimensional nanoparticle transport dynamics. We apply the method to study the behavior of adsorbed nanoparticles at a silicone oil-water interface in a microemulsion system over a range of

Nanoparticle Size and Shape Evaluation Using the TSOM Method

June 1, 2012
Author(s)
Bradley N. Damazo, Ravikiran Attota, Premsagar P. Kavuri, Andras Vladar
A novel through-focus scanning optical microscopy (TSOM) method that yields nanoscale information from optical images obtained at multiple focal planes will be used here for nanoparticle dimensional analysis. The TSOM method can distinguish not only size

Ultimate bending strength of Si nanowires

April 11, 2012
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Igor Levin, Robert F. Cook
Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this work, the ultimate bending strengths of Si nanowires with radii in the 20 nm to 60 nm range

Patterned Defect & CD Metrology by TSOM Beyond the 22 nm Node

April 10, 2012
Author(s)
Ravikiran Attota, Abraham Arceo, Benjamin Bunday, Victor Vertanian
Through-focus scanning optical microscopy (TSOM) is a novel method [1-8] that allows conventional optical microscopes to collect dimensional information down to the nanometer level by combining two-dimensional optical images captured at several through

Residual Layer Thickness Control and Metrology in Jet and Flash Imprint Lithography

April 10, 2012
Author(s)
Ravikiran Attota, Shrawan Singhal, Sreenivasan S.V.
Jet-and-Flash Imprint Lithography (J-FIL) has demonstrated capability of high-resolution patterning at low costs. For accurate pattern transfer using J-FIL, it is imperative to have control of the residual layer thickness (RLT) of cured resist underneath

Contour Metrology using Critical Dimension Atomic Force Microscopy

April 9, 2012
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Andras Vladar, Bin Ming, Michael T. Postek
The critical dimension atomic force microscope (CD-AFM), which is used as a reference instrument in lithography metrology, has been proposed as a supplemental instrument for contour measurement and verification. However, although data from CD-AFM is

Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light

April 4, 2012
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscopy to

SEM imaging of ultra-high aspect ratio hole features

March 29, 2012
Author(s)
John S. Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Nevertheless
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