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Shauna M. Dorsey, Sheng Lin-Gibson, Carl Simon Jr.
We have investigated the ability of X-ray microcomputed tomography (CT) to make quantitative, three-dimensional (3D) measurements of cell adhesion and proliferation in polymeric tissue engineering scaffolds. The most common method for examining cells in
Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation
Juan C. Collado Gomez, Eduard Rocas, Jordi Mateu, Nathan D. Orloff, James C. Booth, Alberto Padillo, Juan Callaghan
This work proposes a procedure to characterize the intrinsic nonlinearities of bulk acoustic wave resonators by performing one port measurements of the second harmonic and second order intermodulation spurious signals. Closed-form expressions have been
Patrick M. Lenahan, Corey Cochrane, Jason Campbell, Jason Ryan
Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level
Oana Jurchescu, Brad Conrad, Christina Hacker, David J. Gundlach, Curt A. Richter
The fabrication of top metal contacts for organic electronics represents a challenge and has important consequences for electrical properties of such systems. We report a low cost and non-destructive printing process, Flip Chip Lamination (FCL), to
Bryan M. Barnes, Richard Quintanilha, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints and
J D. Baltrusch, A Negretti, T Calarco, Jacob Taylor
We present a detailed analysis of the modulated-carrier quantum phase gate implemented with Wigner crystals of ions confined in Penning traps. We elaborate on a recent scheme, proposed by two of us, to engineer two-body interactions between ions in such
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Jason P. Campbell, Fei Zhang, Chen Wang, John S. Suehle, Vinny Tilak, Jody Fronheiser
In this paper, we attempt to summarize the graphene component of the first two of the GRAPHENE, Ge/III-V AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS symposia [1, 2]. While not exhaustive and complete, a review of the papers presented at these
Robert R. Keller, David T. Read, Roey Shaviv, Greg Harm, Sangita Kumari
Electromigration (EM) of a dual damascene, single-via fed, test vehicle was measured using DC, AC followed by DC, and three rectangular-wave DC stressing conditions at 598 K. In some of the experiments samples were allowed to cool between stress cycles
In this talk I will 1) briefly review SEDs history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, and 3)
Test structures are critical tools for semiconductor manufacturers, allowing for understanding of the process and individual circuit elements that cannot be acquired from measurements of the circuits, which can have billions of transistors and other
Mingdong M. Li, Suvajyoti S. Guha, Rebecca A. Zangmeister, Michael J. Tarlov, Michael R. Zachariah
Electrospray (ES) sources are commonly used to introduce non-volatile materials (e.g. nanoparticles, proteins, etc.) in to the gas phase for characterization by mass spectrometry and ion mobility. Recent studies in our group using electrospray ion mobility
Shannon B. Hill, Fardina Asikin, Lee J. Richter, Steven E. Grantham, Charles S. Tarrio, Thomas B. Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of
Kevin L. Silverman, Mingming M. Feng, Richard P. Mirin, Steven T. Cundiff, Matt Williams, J. Nathan N. Kutz
We consider experimentally and theoretically the optical field dynamics of a five emitter laser array subject to a linearly decreasing injection current. We have achieved experimentally an array that produces a robust oscillatory power output with a nearly
The limitations of current thin film and the gaps to cost efficient photovoltaic (PV) cells will be discussed in the presentation. This discussion will suggest ways to improve PV cell performance through the use of reduced dimension materials (e.g
Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates
Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon in most
J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A. Bertness, S M. George, Victor M. Bright, Charles T. Rogers, Norman Sanford
Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000-100,000. We report on singly-clamped NW mechanical
Nancy J. Lin, Sheng Lin-Gibson, Jirun Sun, Yifu Ding
Surface topography is known to play a critical role in the biological response to materials, with surface features on the order of both microns and nanometers altering cell response, including morphology, adhesion, cytoskeletal orientation, and gene
Yeon Sook Chung, Nayool Shin, Jihoon Kang, Youngeun Jo, Vivek Prabhu, Regis J. Kline, John E. Anthony, Do Y. Yoon
The blend films of small molecule semiconductors with insulating polymers exhibit not only an excellent solution processability, but also superior performance characteristics (field-effect mobility, on/off ratio, threshold voltage and stability) over those
Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effective