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Yuri Ralchenko, Jeffrey R. Fuhr, F -. Jou, Alexander Kramida, William C. Martin, Larissa Podobedova, Joseph Reader, Edward B. Saloman, Jean E. Sansonetti, Wolfgang L. Wiese
Many solutions to the problem of estimating the consensus mean from the results of multiple methods or laboratories have been proposed. In a Bayesian analysis...
The emergence of Bluetooth devices operating in the same 2.4 GHz ISM frequency band as existing Wireless Local Area Network devices implementing the IEEE 802.11...
Cryptography offers powerful techniques for data protection in classical communications applications. Claims are often made that some new technology will enable...
We discuss the text-independent data supplied for the 2001: A Speaker Odyssey evaluation track. We cover the data creation and selection process, and we present...
Gery R. Stafford, Thomas P. Moffat, V D. Jovic, David R. Kelley, John E. Bonevich, Daniel Josell, Mark D. Vaudin, N G. Armstrong, W H. Huber, A Stanishevsky
The electrochemical behavior of copper in copper sulfate - sulfuric acid, containing various combinations of NaCl, sodium 3 mercapto-1 propanesulfonate (MPSA)...
Joseph C. Woicik, E J. Nelson, T Kendelewicz, P Pianetta
We decribe an experimental method by which site-specific valence-electronic structure may be obtained. It utilizes the spatial dependence of the electric-field...
Mannitol crystals with sizes ranging from {nearly equal to} 100 m to {nearly equal to} 400 m were mixed with calcium phosphate cement (CPC) powders that...
M measurements were made on textured PZT thin films excited by a 1 V rms in the presence of various DC biasing voltages. Apparent domain pinning sites were...
The dielectric permittivity and impedance characteristics were evaluated for high-dielectric constant polymer composite films, that are being developed by the...
This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal...
A method for calculating uncertainties of color quantities has been developed using a numerical approach based on the ISO Guide to the Expression of Uncertainty...
J P. Burke, S T. Chu, Garnett W. Bryant, Carl J. Williams, P S. Julience
We theoretically investigate three approaches to trapping atoms above linear integrated optical waveguides. A two-color scheme balances the decaying evanescent...
An integrating sphere simulation program, previously developed for the realization of the luminous flux unit at NIST, has been utilized to analyze spatial...
We discuss efforts that have been made to help establish-in practice-a greater uniformity of nomenclature used for various terms in radiometry as well as...
This paper describes a program designed to derive from fundamental molecular and transition state properties rate constants that are used for the simulation of...
We report measurements of heat transfer coefficients of flowing supercritical carbon dioxide (7.38 MPa critical pressure, 31.1 degrees C critical temperature)...
This paper describes current work at NIST in high-precision length metrology aimed at development of such low-uncertainty reference measurements for...
Bradley N. Damazo, Andras Vladar, Alice V. Ling, M A. Donmez, Michael T. Postek, Crossley E. Jayewardene
This paper describes the design and implementation of a system for monitoring the performance of a critical dimension measurement scanning electron microscope...
Nicholas G. Dagalakis, John A. Kramar, E Amatucci, Robert Bunch
The static and dynamic performance of a control system depends on the accuracy of the mathematical model of the plant that is being controlled. In this work...
The National Integrated Ballistics Information Network (NIBIN) is currently under development by the Bureau of Alcohol, Tobacco and Firearms (ATF) and the...
Richard M. Silver, Jay S. Jun, S Fox, Edward A. Kornegay
As devices shrink and clock speeds continue to increase, process control and measurement of I critical dimension linewidths and the essential overlay of...
The role of process simulation is becoming an increasingly important part of microlithography process control and photomask metrology as wafer feature sizes...