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Advanced Electronics Group

Develops measurement infrastructure to identify specific defects which limit the performance, reliability, and commercial potential of electronics designed to operate in extreme environments.

The Advanced Electronics Group leverages deep device-physics expertise to develop metrology needed to support circuit operation in extreme temperature environments. These circuits are tasked with enabling power conditioning and conversion in data center and transportation applications, as well as enabling cryogenic control large-scale qubit systems. The common theme of the group is a unceasing development of measurements to assess the impact of microscale defects which limit the macroscale circuit performance and reliability.

News and Updates

Publications

Impact of Deep-Level Traps on Carrier Mobility in β-Ga2O3 MOSFETs

Author(s)
Ory Maimon, Neil Moser, Pragya Shrestha, Minyeong Kim, Sang-Mo Koo, Kyle Liddy, Andrew Green, Kelson Chabak, Sujitra Pookpanratana, Qiliang Li
Ultra-wide bandgap β-Ga2O3-based power devices are promising and rapidly developing, but its mobility in field-effect transistors (FET) falls short of the...

Awards

2023 IEEE EDS Leo Esaki Award

For recognizing the best paper appearing in a fast turnaround archival publication of the IEEE Electron Devices Society, targeted to the IEEE Journal of Electron Devices Society. For their paper: Ultrafast ID-VG Technique for Reliable Cryogenic...

Contacts

Group Leader

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