Author(s)
John Diulus, Ashley Head, J. Anibal Boscoboinik, Andrei Kolmakov
Abstract
Advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at near-ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we demonstrated the capabilities of an ambient pressure XPS (APXPS) setup for in-situ plasma environment measurements, allowing plasma-surface interactions to be studied in operando rather than using the traditional before-and-after analysis approach. This innovative "plasma-XPS" technique facilitates the identification of short-lived reaction intermediates critical to semiconductor nanomanufacturing processes, such as physical vapor deposition, plasma etching, and atomic layer deposition. In this work, we apply plasma-XPS to monitor real-time surface chemical changes on a model Ag(111) single crystal exposed to oxidizing and reducing plasmas. We correlate surface-sensitive data with concurrent gas-phase XPS measurements and residual gas analysis (RGA) of species generated during plasma exposure, highlighting the significant role of plasma-induced chamber wall reactions. Ultimately, we demonstrate that plasma-XPS provides comprehensive insights into both surface and gas-phase chemistry, establishing it as a versatile and dynamic characterization tool with broad applications in microelectronics research. Finally, we outline potential enhancements and future directions to advance plasma-XPS investigations further.
Citation
Journal of Vacuum Science & Technology A
Keywords
Plasma Chemistry, Ag, Operando XPS, APXPS, Plasma-XPS, plasma mass-spectroscopy
Citation
Diulus, J.
, Head, A.
, Boscoboinik, J.
and Kolmakov, A.
(2026),
Operando XPS in reactive plasmas: The importance of the wall reactions, Journal of Vacuum Science & Technology A, [online], https://doi.org/10.1116/6.0004569, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=959473 (Accessed June 12, 2026)
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