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Atom Scale Device Group

Develops, measures, understands and exploits quantum and electronic devices and sensors at the interface between atomic and nanoscale solid-state systems. Systems under study include dopant-based and nanofabricated Si devices for quantum technologies, quantum simulation, quantum sensing and charge sensing, spins in nanoscale and atomic scale solid-state systems, and hybrid solid-state systems.

Our program combines theory and experiment. Theory is extending the fundamental understanding of systems at the atomic/nanoscale interface, probing the frontier between the classical and the quantum, exploring new applications in nanoscale and quantum technologies, and motivating new, precision metrology. We are developing the theoretical understanding needed to exploit nanoplasmonic and semiconductor quantum dot structures for quantum and nanoscale technologies, to develop next generation atomic clocks, to simulate exotic condensed matter with ultracold atoms, to understand quantum information propagation in interacting systems, and to implement useful quantum information, detection and measurement protocols.

Experiment is being conducted to develop precision measurement tools for this regime, to collect precise data essential for the applications mentioned, and to further the understanding of these systems. We are probing the charge and spin transport, optical, and mechanical properties of nanoscale and quantum-coherent solid-state systems. We are exploiting nanoscale Si devices to provide precision charge sensing on-chip. We are exploring the use of these nanoscale Si devices for quantum technology and are pushing these devices to the atomic scale using structures fabricated by controlled placement of individual dopants. Such devices will allow us to explore the ultimate atomic-scale limit for traditional Si electronic devices and implement atomic-scale quantum technologies in Si. We are developing isotopically enriched Si needed for Si quantum technology and investigating novel materials for spintronics. We are developing semiconductor quantum dots as useful sources of single photons, entangled photons, and charge and spin qubits. We are creating nanomechanical devices whose mechanical vibration can approach the quantum ground state, opening the way to macroscopic quantum systems.

News and Updates

Measuring Up: Coming Out from the Cold

Researchers at the National Institute of Standards and Technology (NIST) have constructed and tested a system that allows commercial electronic components –

Projects and Programs

Atom-based Silicon Quantum Electronics

To fabricate, measure, and model solid state implementations of atomically precise devices. Develop a robust infrastructure to fabricate prototype few-atom


Single-electron states of phosphorus-atom arrays in silicon

Maicol Ochoa, Keyi Liu, Michał Zieliński, Garnett W. Bryant
We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing

Nagaoka Ferromagnetism in 3 × 3 Arrays and Beyond

Yan Li, Keyi Liu, Garnett W. Bryant
Nagaoka ferromagnetism (NF) is a long-predicted example of itinerant ferromagnetism (IF) in the Hubbard model that has been studied theoretically for many years



Group Leader

Group Office Manager