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To fabricate, measure, and model solid state implementations of atomically precise devices. Develop a robust infrastructure to fabricate prototype few-atom
Nano and atomic scale theory of the electronic, optical and mechanical properties of ultrasmall structures, such as semiconductor quantum dots and dopants in Si
Crystalline silicon is a desirable host material for solid state qubits due to potential for electrically controlled interactions between exquisitely isolated
Magnetic tunnel junctions, nanostructured by highly charged ions, are being probed and characterized to establish the foundation for novel magnetic random
Tunnel junctions, single electron transistors and superconducting resonators are fabricated using ultra-high vacuum metals’ deposition and in situ low energy
We are characterizing Si-based single-electron quantum dots at low temperatures (down to 10 mK) to explore the possibility of quantum coherent manipulation in
We are working to fabricate and perform low-temperature measurements of CMOS-compatible single electron devices in silicon which could be used as a standard of