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Physical Measurement Laboratory / Nanoscale Device Characterization Division

Atom Scale Device Group

Projects/Programs

Displaying 1 - 13 of 13
Single electron devices (SEDs) Figure 1

Applied Single-Electron Metrology

Ongoing
Atoms are natural high-fidelity standards. They are used as the basis for time and frequency standards as well as qubits in nascent quantum computer architectures. Electrostatically defined, single-electron devices behave as tunable artificial atoms which can trap, manipulate, and shuttle electrons
STM patterning at 4K.

Atom-based Silicon Quantum Electronics

Ongoing
This project is developing atomically precise, atom-based electronic devices for use in quantum information processing and analog quantum simulation. We are developing the fabrication, measurement, and modeling methods needed to realize single atom, spin-based qubits in silicon as an integrated
Atom-by-atom fabrication

Atom-scale Devices: Engineering, Metrology and Manufacturability

Ongoing
For these atomically defined devices, the exact position, type, number of atoms, and their arrangement, dramatically influence device behavior. By controlling the precise atomic makeup and geometry of a device it is possible to engineer a device’s electronic, quantum and mechanical structure to a
Color centers in Si

Connecting Quantum Electronics and Photonics using Silicon Color Centers

Ongoing
Overview: In the first decades of the semiconductor electronics industry, color centers were ubiquitous in silicon. However, through iterative refinement of materials’ processing and spectroscopy methods, color centers are virtually non-existent in commercial silicon today, and leveraging their
joint quantum institute

Designing the Nanoworld: Nanostructure, Nanodevices, and Nano-optics

Ongoing
Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the
STM image of a 28-Si film deposited onto a Si/100 substrate

Enriched Silicon and Devices for Quantum Information

Ongoing
Enriching silicon from 5% to <1 ppm 29Si Groundbreaking work around the world has realized qubits in silicon using metal-oxide-semiconductor (MOS) devices, single atomic dopants/defects and SiGe heterostructures, and, in all cases, the qubit coherence and fidelity properties are improved when using
A 3" wafer is seen concentric with the lower plasma electrode.

Precision Materials for Quantum Devices

Ongoing
MBE System Our fabrication system is composed of ultra-high vacuum (UHV) chambers that support the in-vacuum exchange of 75 mm wafers without exposure to air as seen in Figure 1. These chambers are: (1) a deposition chamber with electron gun deposition, UHV compatible sputter guns, in situ shadow
bilayer graphene graph

Si-Based Single Spin/Single Photon Measurement, Coherence and Manipulation

Ongoing
Devices based on moving and controlling single electrons offer the tantalizing possibility of achieving quantum information processing by virtue of their spin or charge coherent properties. We are pursuing CMOS-compatible Si-based quantum dots for a variety of goals, including:” Narrowband high-MHz
single electron devices

Silicon-based single electron current standards

Ongoing
Our devices can manipulate and trap a single electron in a quantum dot through the application of voltages to electrostatically controlled tunnel barriers. By cycling these voltages appropriately, we are able to sequentially pump one electron at a time through the device. To produce a current
Analog quantum simulators (AQS) Figure 1

Silicon-based Solid-State Analog Quantum Simulators

Ongoing
Why Atom-based Si AQS Analog quantum simulators are designed quantum systems with a tunable Hamiltonian to emulate complex quantum systems intractable using classical computers due to the exponential growth of the calculations with system size. Simulating strongly interacting fermions (electrons) on
Hamiltonian Learning

Theory: Designing the Nanoworld

Ongoing
Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the
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