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Jason Campbell

Dr. Campbell is an electrical engineer in the Nanoscale Processes and Measurements Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He received his B.S. and Ph.D. in Engineering Science from the Pennsylvania State University, University Park, PA in 2001 and 2007, respectively. His research was focused on electrically-detected magnetic resonance measurements to identify the atomic scale defects involved in one of the most important advanced CMOS reliability problems (the negative bias temperature instability). In 2007, he was awarded a National Research Council (NRC) post-doctoral fellowship which he spent in the Semiconductor Electronics Division at the National Institute of Standards and Technology (NIST) where he is currently employed as a staff member. He has contributed to more than 50 refereed papers and conference presentations at national and international conferences and has been involved in the technical and managerial committees of both the IEEE IIRW and IEEE IRPS conferences. His research interests involve the fundamentals of the negative bias temperature instability, random telegraph noise in highly scaled devices, galvanomagnetic transport effects, and alternative magnetic resonance measurements.

Publications

Switching variability factors in compliance-free metal oxide RRAM

Author(s)
Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament
Created August 15, 2019, Updated October 9, 2019