Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Random Telegraph Noise in Highly Scaled nMOSFETs

Published

Author(s)

Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng

Abstract

Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion layer and the bulk dielectric defects via elastic tunneling. In this study we extracted the characteristic capture and emission time constants from RTN on highly-scaled nMOSFETs, and show that it is inconsistent with elastic tunneling picture dictated by the physical thickness of the gate dielectric (1.4 nm). Consequently, our results suggest that an alternative model is required and that a large body of the recent RTN and 1/f noise literature very likely needs to be re-interpreted.
Proceedings Title
2009 IEEE International Reliability Physics Symposium
Conference Dates
April 26-30, 2009
Conference Location
Montreal, CA

Keywords

Random Telegraph Noise, 1/f noise, elastic tunneling

Citation

Campbell, J. , Qin, J. , Cheung, K. , Yu, L. , Suehle, J. , Oates, A. and Sheng, K. (2009), Random Telegraph Noise in Highly Scaled nMOSFETs, 2009 IEEE International Reliability Physics Symposium, Montreal, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=901584 (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 26, 2009, Updated February 19, 2017